化学增幅型光刻胶材料研究进展

doi:10.7517/issn.1674-0475.191011

摘要/Abstract

摘要： 芯片集成度的提高促使光刻胶向高分辨率方向发展，光刻技术由紫外全谱曝光发展到单一短波长曝光，为满足光刻胶高感度、高分辨率的要求，化学增幅型光刻胶应运而生。"化学增幅"可以提高光刻胶的量子产率，增强光刻胶感度，在深紫外、极紫外光刻中得到广泛应用。而高性能树脂作为光刻胶的成膜剂，对光刻胶的性能有重要影响，不同的树脂结构对应不同的反应机理。本文重点对化学增幅型光刻胶中的脱保护、重排、分子内脱水、酯化缩聚、交联、解聚等反应进行了总结，并介绍了对应的树脂结构。

关键词: 化学增幅, 光刻胶, 感度, 成膜树脂, 反应机理

Abstract: The drive toward higher integration degree of chips has led to the development of new resist materials with high resolution. The lithography technology is also developed from ultraviolet full-spectrum to single short-wavelength based on the radiation source. In order to meet the requirements of high sensitivity and resolution of photoresist, chemically amplified photoresists have been developed. "Chemical amplified" can increase the quantum yields and enhance the sensitivity of photoresist, which has been widely used in deep ultraviolet and extreme ultraviolet photoresists. As the film forming agent of photoresist, the resin has a significant effect on the performance of photoresist. This paper focuses on several types of reactions in chemically amplified photoresists:deprotection, rearrangement, intramolecular dehydration, esterification polycondensation, crosslinking and depolymerization reaction. In addition, a series of polymers based on chemically amplified are highlighted, since different resin structures correspond to different reaction mechanisms.

Key words: chemical amplified, photoresist, sensitivity, film-forming resin, reaction mechanism

郑祥飞, 孙小侠, 刘敬成, 穆启道, 刘仁, 刘晓亚. 化学增幅型光刻胶材料研究进展[J]. 影像科学与光化学, 2020, 38(3): 392-408.

ZHENG Xiangfei, SUN Xiaoxia, LIU Jingcheng, MU Qidao, LIU Ren, LIU Xiaoya. Research Progress of Chemically Amplified Photoresist Materials[J]. Imaging Science and Photochemistry, 2020, 38(3): 392-408.

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