极紫外(EUV)光刻胶树脂及合成方法进展

doi:10.7517/issn.1674-0475.210122

摘要/Abstract

摘要： 极紫外光刻（EUVL）是实现22 nm及以下节点集成电路制造最为高效的工艺技术。本文介绍了EUV光刻胶树脂的结构特点及其对光刻性能的影响，并着重整理了近年来化学增幅型和非化学增幅型EUV光刻胶树脂的合成方法。最后，对EUV光刻胶树脂的结构设计进行了分析与展望。

关键词: 光刻胶树脂, 极紫外光刻, 合成, 改性

Abstract: Extreme ultraviolet lithography (EUVL) has become the most productive technology to achieve the manufacturing of integrated circuit at 22 nm node and beyond. In this paper, the structural characteristics of the EUV photoresist resins and their effects on photolithographic properties were introduced. Based on the structures and synthesis methods of photoresists, the polymeric synthesis methods of chemically and non-chemically amplified EUV resists were mainly reviewed. Finally, the direction of structural design for EUV photoresist in the future was forecasted.

Key words: photoresist resin, extreme ultraviolet lithography, synthesis, modification

文帅, 刘强. 极紫外(EUV)光刻胶树脂及合成方法进展[J]. 影像科学与光化学, 2021, 39(4): 504-511.

WEN Shuai, LIU Qiang. Development of Photoresist Resins and Their Synthesis Methods for Extreme Ultraviolet Lithography[J]. IMAGING SCIENCE AND PHOTOCHEMISTRY, 2021, 39(4): 504-511.

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