制备条件对铝掺杂氧化锌(AZO)薄膜结构和电学性质的影响

doi:10.7517/j.issn.1674-0475.2009.06.452

影像科学与光化学 ›› 2009, Vol. 27 ›› Issue (6): 452-461.DOI: 10.7517/j.issn.1674-0475.2009.06.452

制备条件对铝掺杂氧化锌(AZO)薄膜结构和电学性质的影响

张天宝^1,2, 李金培¹

1. 中国科学院理化技术研究所, 北京100190;
2. 中国科学院研究生院, 北京100049

收稿日期:2009-05-31 修回日期:2009-07-16 出版日期:2009-11-23 发布日期:2009-11-23
通讯作者: 李金培,E-mail: jpli@mail.ipc.ac.cn.

Effects of Preparing Conditions on Structure and Electrical Properties of AZO Films

ZHANG Tian-bao^1,2, LI Jin-pei¹

1. Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;
2. Graduate School of Chinese Academy of Sciences, Beijing 100049, P. R. China

Received:2009-05-31 Revised:2009-07-16 Online:2009-11-23 Published:2009-11-23

摘要/Abstract

摘要： 本文利用溶胶-凝胶法在玻璃基底上制备得到了AZO透明导电薄膜,就两种不同的热处理-退火方式对薄膜的结构与性质的影响做了比较,研究了掺杂浓度、退火温度对薄膜结构及性质的影响规律.结果表明,高温、分层退火、铝掺杂均有利于生成结晶度高、具有C轴优先取向的AZO薄膜;高温和分层退火有利于晶粒长大,相反铝掺杂却有碍晶粒长大;薄膜的电学性质随退火温度和铝掺杂量的变化呈现规律的变化.通过分析AZO薄膜内的晶体生长过程,本文认为主要是制备条件和AZO晶体的晶面习性导致了薄膜的结晶度、晶体生长取向性和晶粒尺寸等方面的差异.

关键词: 溶胶-凝胶, 铝掺杂氧化锌薄膜, 掺杂, 热处理, 退火

Abstract: Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been prepared by the sol-gel method on glass substrate. In this paper,the effect of two different ways of heat-treatment and anneal on structure and properties of thin films was compared and the influence of doping concentration and annealed temperature on structure and properties of AZO films was studied. It was found that high temperature,layer by layer annealing and doping of aluminum are all propitious to the AZO films with high crystalline and preferential c-axis orientation;and on the other hand high temperature and layer by layer annealing are demonstrated to be beneficial to the crystallite size enhancement,whereas which is hold back by doping of aluminum;in addition,the regular change of the electricity properties of thin films was revealed with the change of annealing temperature and doping concentration of aluminum. By analyzing the process of crystal growth inside AZO thin films,the conclusion was drawn in this paper that the difference of crystalline,crystallite orientation and crystallite size of AZO films was mainly caused by preparing conditions and growth habits of AZO crystallite.

Key words: sol-gel, AZO thin film, doping, heat-treatment, anneal

中图分类号:

张天宝, 李金培. 制备条件对铝掺杂氧化锌(AZO)薄膜结构和电学性质的影响[J]. 影像科学与光化学, 2009, 27(6): 452-461.

ZHANG Tian-bao, LI Jin-pei. Effects of Preparing Conditions on Structure and Electrical Properties of AZO Films[J]. Imaging Science and Photochemistry, 2009, 27(6): 452-461.

参考文献

[1] Zhou Y,Kelly P J,Postill A,et al.The characteristics of aluminium-doped zinc oxide films prepared by pulsed magnetron sputtering from powder targets[J].Thin Solid Films,2004,447-448:33-39.
[2] Kim H,Pique A,Horwitz J S,et al.Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices[J].Thin Solid Films,2000,377-378:798-802.
[3] Musat V,Teixeira B,Fortunato E,et al.Al-doped ZnO thin films by sol-gel method[J].Surface and Coatings Technology,2004,180-181:659-662.
[4] Keh M L,Paijay T.Growth mechanism and characterization of ZnO:Al multi-layered thin films by sol-gel technique[J].Thin Solid Films,2007,515:8601-8604.
[5] Radhouane B H T.Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol-gel process[J].Journal of the European Ceramic Societ,2005,25:3301-3306.
[6] Mridha S,Basak D.Effect of thickness on the structural,electrical and optical properties of ZnO films[J].Materials Research Bulletin,2007,42:875-882.
[7] Teresa M B,Jacquelyn L,Cassandra Fry,et al.Room temperature chemical vapor deposition of c-axis ZnO[J].Journal of Crystal Growth,2005,274:412-417.
[8] Mohammad M T,Hashim A A,Al-Maamory M H.Highly conductive and transparent ZnO thin films prepared by spray pyrolysis technique[J].Materials Chemistry and Physics,2006,99:382-387.
[9] 吕敏峰,崔作林,张志煜.Sol-Gel法制备ZnO:Al透明导电薄膜[J].材料科学与工程学报,2003,21(2):224-227.Lu M F,Cui Z L,Zhang Z Y.Aluminium-doped ZnO transparent conducting thin films by the sol-gel method[J].Journal of Materials Science & Engineering,2003,21(2):224-227.
[10] Xu Z Q,Deng H,Li Y,et al.Al-doping effects on structure,electrical and optical properties of c-axis-orientated ZnO:Al thin films[J].Materials Science in Semiconductor Processing,2006,9:132-135.
[11] Kuo S Y,Chen W C,Lai F I,et al.Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films[J].Journal of Crystal Growth,2006,287:78-84.
[12] Gregory J E,Xiao D Z.Discovery-based design of transparent conducting oxide films[J].Thin Solid Films,2007,515:7025-7052.
[13] 尹玉刚,沈鸿烈,楼晓波,等.溶胶一凝胶法生长(002)高度择优取向的ZnO:Al薄膜[J].功能材料,2008,39(7):1122-1124.Yin Y G,Shen H L,Lou X B,et al.Highly (002) orientated ZnO:AI films prepared by sol-gel method[J].Journal of Functional Materials,2008,39(7):1122-1124.
[14] Xu Z Q,Deng H,Li Y,et al.Characteristics of Al-doped c-axis orientation ZnO thin films prepared by the sol-gel method[J].Materials Research Bulletin,2006,41:354-358.
[15] Mass J,Bhattacharya P,Katiyar R S.Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition[J].Materials Science and Engineering,2003,B103:9-15.

制备条件对铝掺杂氧化锌(AZO)薄膜结构和电学性质的影响

Effects of Preparing Conditions on Structure and Electrical Properties of AZO Films

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	马逸骅, 陈琳, 杨永珍, 于世平, 苏秀琴. 钆掺杂碳量子点的制备及其双模态成像研究进展[J]. 影像科学与光化学, 2020, 38(5): 763-770.
[2]	邱申保, 王素敏, 王奇观, 尚嘉茵, 张文治, 杨磊, 樊亚茹. 水溶性氮掺杂石墨烯量子点的合成及其对Pb²⁺的选择性识别研究[J]. 影像科学与光化学, 2018, 36(1): 108-116.
[3]	陈文铖, 李振声, 佟庆笑. 不对称刚性扭曲菲并咪唑分子的设计合成及其深蓝电致发光性能研究[J]. 影像科学与光化学, 2017, 35(5): 720-728.
[4]	曹进, 吴倜, 张伟民, 王占文, 张孝良, 蒲嘉陵. 光敏聚合物薄膜光化学性能及其诱导液晶分子取向性能的研究[J]. 影像科学与光化学, 2017, 35(1): 53-60.
[5]	聂坤, 杨汉培, 孙慧华, 崔素珍, 吴俊明. 新型Fe掺杂钙钛矿型KMgF₃光催化剂制备及性能[J]. 影像科学与光化学, 2017, 35(1): 61-69.
[6]	王勐, 夏静, 朱丹丹, 王磊, 孟祥敏. Fe掺杂ZnO空心微球的制备与光催化性能[J]. 影像科学与光化学, 2016, 34(3): 245-251.
[7]	洪星星, 康向东, 刘岗, 成会明. 原位聚合碳掺杂改性石墨态氮化碳光催化活性研究[J]. 影像科学与光化学, 2015, 33(5): 434-440.
[8]	李海燕, 钱俊杰, 刘金凤, 李秋叶, 张敏, 杨建军. 氮铋共掺杂TiO₂的合成及其可见光催化性能研究[J]. 影像科学与光化学, 2013, 31(6): 411-420.
[9]	张鹏, 于彦龙, 匡元江, 姚江宏, 曹亚安. Si掺杂TiO₂催化剂的结构与可见光催化活性研究[J]. 影像科学与光化学, 2013, 31(4): 295-304.
[10]	费学宁, 刘星星, 李金蕊, 姜远光. 磁功能性TiO₂光催化剂的制备及特性[J]. 影像科学与光化学, 2013, 31(3): 229-237.
[11]	张志晖, 贺军辉, 杨巧文. 酸催化溶胶-凝胶法制备高强度SiO₂增透膜研究进展[J]. 影像科学与光化学, 2013, 31(2): 91-102.
[12]	郑云, 顾彦, 汪淑廉, 杨静, 兰天龙, 黄应平, 张爱清. 铕掺杂TiO₂的制备及其可见光光催化性能研究[J]. 影像科学与光化学, 2012, 30(1): 60-70.
[13]	景明俊, 王岩, 张敏, 杨建军. 负载金的掺氮二氧化钛的制备及其可见光催化性能[J]. 影像科学与光化学, 2011, 29(5): 353-363.
[14]	王攀, 曹婷婷, 方艳芬, 罗光富, 李瑞萍, 黄应平. Hg掺杂CdS的制备及可见光降解有毒有机污染物[J]. 影像科学与光化学, 2011, 29(1): 11-23.
[15]	阮修莉, 邵冬海. TiO₂纳米管电极金属离子掺杂的表征[J]. 影像科学与光化学, 2011, 29(1): 54-62.