先进光刻胶材料的研究进展

doi:10.7517/j.issn.1674-0475.2011.06.417

摘要/Abstract

摘要： 本文简述了光刻技术及光刻胶的发展过程,并对应用于193纳米光刻和下一代EUV光刻的光刻胶材料的研究进展进行了综述,特别对文献中EUV光刻胶材料的研发进行了较为详细的介绍,以期对我国先进光刻胶的研发工作有所帮助.

关键词: 光刻胶, 193nm光刻, EUV光刻, 化学放大光刻胶, 分子玻璃

Abstract: This article reviews the development of lithography technology and photoresists as well as their molecular structure for 193 nm and extreme ultravioletlithography (EUVL,the next generation lithography).Especially,we describe the recent research and development of EUV photoresists in detail for the purpose of being conducive to the domestic research on advanced photoresists.

Key words: photoresists, EUV lithography, 193 nm lithography, chemically amplified photoresists, molecular glass

中图分类号:

O64
TN305

许箭, 陈力, 田凯军, 胡睿, 李沙瑜, 王双青, 杨国强. 先进光刻胶材料的研究进展[J]. 影像科学与光化学, 2011, 29(6): 417-429.

XU Jian, CHEN Li, TIAN Kai-jun, HU Rui, LI Sha-yu, WANG Shuang-qing, YANG Guo-qiang. Molecular Structure of Advanced Photoresists[J]. Imaging Science and Photochemistry, 2011, 29(6): 417-429.

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