ZnO/ZnS大面积单晶异质结及其光电性能研究

doi:10.7517/j.issn.1674-0475.2017.04.031

影像科学与光化学 ›› 2017, Vol. 35 ›› Issue (5): 712-719.DOI: 10.7517/j.issn.1674-0475.2017.04.031

ZnO/ZnS大面积单晶异质结及其光电性能研究

王磊^1,2, 高健³, 孟祥敏¹

1. 中国科学院理化技术研究所光化学转换与功能材料重点实验室, 北京 100190;
2. 中国科学院大学, 北京 100049;
3. Rensselaer Polytechnic Institute, Troy, NY 12180, USA

收稿日期:2017-04-18 修回日期:2017-05-31 出版日期:2017-09-15 发布日期:2017-09-15
通讯作者: 孟祥敏
基金资助:
中国科学院战略先导专项（XDA09040203）资助

Large-area Single-crystalline ZnO/ZnS Heterostructure and Its Optoelectronic Properties

WANG Lei^1,2, GAO Jian³, MENG Xiangmin¹

1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;
2. University of Chinese Academy of Sciences, Beijing 100049, P. R. China;
3. Rensselaer Polytechnic Institute, Troy, NY 12180, USA

Received:2017-04-18 Revised:2017-05-31 Online:2017-09-15 Published:2017-09-15

摘要/Abstract

摘要：

ZnO和ZnS是重要的Ⅱ-Ⅵ族宽禁带半导体材料，二者之间形成的异质结具有Ⅱ型能带结构，可以促使受激载流子实现空间分离，延长受激载流子的寿命，从而提高材料的光催化和光电探测性能。本文利用物理气相沉积方法，首次在ZnO块状单晶衬底上生长了一层ZnS单晶薄膜，薄膜由厚约4 nm、边长几百纳米，取向一致的等边三角形纳米片组成。X射线衍射和透射电子显微镜的表征结果显示，ZnS薄膜与ZnO衬底具有单一外延取向关系。阴极射线荧光光谱表明ZnS薄膜的制备显著提高了ZnO单晶片可见光荧光发光峰的强度。此外，对ZnO/ZnS异质结的紫外光电探测性能的研究结果显示，异质结对不同波长的紫外光均有响应，光响应的上升弛豫时间和下降弛豫时间分别为200 ms和1050 ms，展示了较好的光电应用潜力。

关键词: ZnS, 外延生长, 单晶异质结, 光电探测

Abstract:

ZnO and ZnS are both important Ⅱ-Ⅵ wide bandgap semiconductors. Their heterostructures have Type-Ⅱ band alignment, which contributes to better charge separation efficiencies and longer charge lifetimes. In this work, a simple physical vapor deposition method was used to grow ZnS single-crystalline membrane on ZnO bulk substrates. The ZnS film was composed of ultrathin 4 nm-thick equilateral ZnS triangles. This is the first report of synthesis of two-dimensional ultra-thin ZnS materials. XRD and TEM results reveal the epitaxial growth behavior of ZnS on ZnO substrates. After ZnS coating, the intensities of visible photoluminescence peak increased dramatically, which can be attributed to the defects introduced during the growth. An ultraviolet photodetector was assembled using the heterostructure, and its photodetection properties were evaluated. The results showed that the heterostructure can detect ultraviolet light of broad range of wavelengths, and the rising time and the decay time were 200 ms and 1050 ms, respectively, indicating that ZnO/ZnS large-area single-crystalline heterostructuresare promising candidates for optoelectronic applications.

Key words: ZnS, epitaxial growth, single-crystalline heterostructures, photodetection

王磊, 高健, 孟祥敏. ZnO/ZnS大面积单晶异质结及其光电性能研究[J]. 影像科学与光化学, 2017, 35(5): 712-719.

WANG Lei, GAO Jian, MENG Xiangmin. Large-area Single-crystalline ZnO/ZnS Heterostructure and Its Optoelectronic Properties[J]. Imaging Science and Photochemistry, 2017, 35(5): 712-719.

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ZnO/ZnS大面积单晶异质结及其光电性能研究

Large-area Single-crystalline ZnO/ZnS Heterostructure and Its Optoelectronic Properties

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