Abstract: Novolak-diazonaphthoquinone photoresists have been widely used in g-line、i-line lithography for its high performance. Although g-line and i-line photoresists are both consisted of novolak resin and diazonaphthoquinone photoactive compounds,in order to fit i-line exposure wavelength and seeking for higher resolution, novolak resin and photoactive compounds(PAC) both have difference in structure from g-line to i-line.In i-line resist,the o-o'bonding content of resin is higher, the esterfication of PAC is higher, the proximity of DNQ groups is distant. Dissolution promoter is an important component of i-line resists, some phenolic additives were very useful to control the dissolution behavior.

Key words: i-line, photoresist, novolak, photoactive compounds, dissolution promoter