Imaging Science and Photochemistry ›› 2009, Vol. 27 ›› Issue (6): 452-461.DOI: 10.7517/j.issn.1674-0475.2009.06.452

Previous Articles     Next Articles

Effects of Preparing Conditions on Structure and Electrical Properties of AZO Films

ZHANG Tian-bao1,2, LI Jin-pei1   

  1. 1. Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;
    2. Graduate School of Chinese Academy of Sciences, Beijing 100049, P. R. China
  • Received:2009-05-31 Revised:2009-07-16 Online:2009-11-23 Published:2009-11-23

Abstract: Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been prepared by the sol-gel method on glass substrate. In this paper,the effect of two different ways of heat-treatment and anneal on structure and properties of thin films was compared and the influence of doping concentration and annealed temperature on structure and properties of AZO films was studied. It was found that high temperature,layer by layer annealing and doping of aluminum are all propitious to the AZO films with high crystalline and preferential c-axis orientation;and on the other hand high temperature and layer by layer annealing are demonstrated to be beneficial to the crystallite size enhancement,whereas which is hold back by doping of aluminum;in addition,the regular change of the electricity properties of thin films was revealed with the change of annealing temperature and doping concentration of aluminum. By analyzing the process of crystal growth inside AZO thin films,the conclusion was drawn in this paper that the difference of crystalline,crystallite orientation and crystallite size of AZO films was mainly caused by preparing conditions and growth habits of AZO crystallite.

Key words: sol-gel, AZO thin film, doping, heat-treatment, anneal

CLC Number: