Large-area Single-crystalline ZnO/ZnS Heterostructure and Its Optoelectronic Properties

doi:10.7517/j.issn.1674-0475.2017.04.031

Abstract

Abstract:

ZnO and ZnS are both important Ⅱ-Ⅵ wide bandgap semiconductors. Their heterostructures have Type-Ⅱ band alignment, which contributes to better charge separation efficiencies and longer charge lifetimes. In this work, a simple physical vapor deposition method was used to grow ZnS single-crystalline membrane on ZnO bulk substrates. The ZnS film was composed of ultrathin 4 nm-thick equilateral ZnS triangles. This is the first report of synthesis of two-dimensional ultra-thin ZnS materials. XRD and TEM results reveal the epitaxial growth behavior of ZnS on ZnO substrates. After ZnS coating, the intensities of visible photoluminescence peak increased dramatically, which can be attributed to the defects introduced during the growth. An ultraviolet photodetector was assembled using the heterostructure, and its photodetection properties were evaluated. The results showed that the heterostructure can detect ultraviolet light of broad range of wavelengths, and the rising time and the decay time were 200 ms and 1050 ms, respectively, indicating that ZnO/ZnS large-area single-crystalline heterostructuresare promising candidates for optoelectronic applications.

Key words: ZnS, epitaxial growth, single-crystalline heterostructures, photodetection

WANG Lei, GAO Jian, MENG Xiangmin. Large-area Single-crystalline ZnO/ZnS Heterostructure and Its Optoelectronic Properties[J]. Imaging Science and Photochemistry, 2017, 35(5): 712-719.

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