Research Progress of POSS-containing Photoresist Materials

doi:10.7517/issn.1674-0475.190605

Abstract

Abstract: Photoresists are the key materials for micro-pattern processing. Polyhedral oligomeric silsesquioxane (POSS) is a kind of reinforcement material for polymer with regular cage structure. The polymer modified by POSS realizes organic-inorganic nano-hybridization. The introduction of rigid structure of POSS hinders the movement of polymer molecules, and so significantly increases the glass transition temperature (T_g), reduces the dielectric constant and improves the mechanical properties of the polymers. The etch resistance of POSS-containing photoresists is also enhanced. Based on these advantages, POSS-containing photoresist materials have attracted extensive attention. The research progress on POSS-containing photoresists is briefly introduced.

Key words: photoresist, POSS-containing, photolithography, etch resistance

YOU Fengjuan, HAN Jun, YAN Chenfeng, WANG Liyuan. Research Progress of POSS-containing Photoresist Materials[J]. Imaging Science and Photochemistry, 2019, 37(5): 465-472.

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