Imaging Science and Photochemistry ›› 2020, Vol. 38 ›› Issue (4): 609-614.DOI: 10.7517/issn.1674-0475.200306

• Review and Articles • Previous Articles     Next Articles

Synthesis of Naphthol-based Phenolic Resins and Its Application in Lift-off Photoresist

SUN Xiaoxia1,2, SI Shuwei1,2, ZHENG Xiangfei1, LIU Jingcheng1, MU Qidao2   

  1. 1. School of Chemical and Materials Engineering, Jiangnan University, Wuxi 214122, Jiangsu, P. R. China;
    2. Suzhou Ruihong Electronic Chemical Co., Ltd., Suzhou 215124, Jiangsu, P. R. China
  • Received:2020-03-06 Online:2020-07-15 Published:2020-07-15

Abstract: Naphthol phenolic resins NAPR were synthesized through condensation of α-naphthol, m-cresol and formaldehyde, and the free phenolic hydroxyl groups of the resins were modified with BOC groups. FT-IR, 1H NMR, GPC, and TGA were used to characterize the structure and properties of the resins. Lift-off photoresist was prepared with NAPR-BOC-2 as matrix resin.The resolution, morphology and heat resistance of photoresist were tested, and the maximum resolution of the photoresist was 0.6 μm, and the heat resistance was up to 130℃.

Key words: α-naphthol, phenolic resin, positive photoresist, NAPR-BOC, lift-off