[1] 郑金红,黄志齐,陈欣,等.193 nm光刻胶的研制[J].感光科学与光化学,2005,23(4):300-311.Zheng J H,Huang Z Q,Chen X,et al.The study of 193 nm photoresist[J].Photographic Science and Photochemistry,2005,23(4):300-311. [2] 郑金红,黄志齐,文武.ULSI用193 nm光刻胶的研究进展[J].精细化工,2005,22(5):348-353.Zheng J H,Huang Z Q,Wen W.Progress of 193 nm photoresist for ULSI supporting materials[J].Fine Chemicals,2005,22(5):348-353. [3] Hasegawa E,Maeda K,Iwasc S.Molecular design and development of photoresists for ArF excimer laser lithography[J].Polym.Adv.Technol.,2000,11:560-569. [4] Okoroanyanwu U,Byers J,Shimokawa T,et al.Alicyclic polymers for 193 nm resist application:lithographic evaluation[J].Chem.Master.,1998,10:3328-3333. [5] Seo H L,Jin S H,Choi S J,et al.Design and synthesis of new photoresist materials for ArF lithography[J].J.Appl.Polym.Sci.,2004,92:165-170. [6] Uekono A,Ohdaira T,Suzuki R,et al.Characterization of photoresists for ArF-excimer laser lithography using monoenergetic positron beams[J].J.Polym.Sci.B,:Polym.Phys.,2004,42:341-346. [7] Okoroanyanwu U,Shimokawa T,Byers J,et al.Alicyclic polymers for 193 nm resist applicat synthesis and characterization[J].Chem.Master.,1998,10:3319-3327. [8] Klopp J M,Pasini D,Byers J D,et al.Microlithographic assessment of a novel family of transparent and etch-resistant chemically amplified 193 nm resists based on cyclopolymers[J].Chem.Mater.,2001,13(11):4147-4153. [9] Taylor J C,LeSuer R J,Chambers C R,et al.Experimental techniques for detection of components extracted from model 193 nm immersion lithography photoresists[J].Chem.Mater.,2005,17(16):4194-4203. [10] Dreibelbis R L,Khatri H N,Walborsky H M.Cyclopropanes.XXXVI.stereochemistry of the decomposition of an optically active 1-pyrazoline[J].J.Org.Chem.,1975,40(14):2074-2079. |