The Influence of Exposure Intensity on the Behavior of Carriers and the Trap Effect in Silver Halide Microcrystals

doi:10.7517/j.issn.1674-0475.2005.01.21

Abstract

Abstract: For the question of the photo-action kinetics in the formation process of latent image in silver halide material, the influences of exposure intensity on the behavior of photo-generation carriers and electron trap effect are analyzed. It is obtained that the main factor influencing the decay of photoelectrons evolves from electron traps to the combination of electron traps and recombination centers, and then to recombination centers.

Key words: electron trap, recombination center, exposure intensity, photoelectron, photohole, silver halide Corresponding author:LIU Rong-juan

CLC Number:

TQ57

FU Guang-sheng, LIU Rong-juan, YANG Shao-peng, JIANG Xiao-li, DAI Xiu-hong, LI Xiao-wei. The Influence of Exposure Intensity on the Behavior of Carriers and the Trap Effect in Silver Halide Microcrystals[J]. Imaging Science and Photochemistry, 2005, 23(1): 21-28.

References

[1] Mees C E K,James T H. The Theory of the Photographic Process[M]. The first edit. Beijing:Science Press,1979. 125-142.
[2] M Van den Eeden,F Callens,et al. Computer simulation of transient microwave photoconductivity in silver halide[J].J.Imaging.Sci.Tech.,1994,38(5):475-483.
[3] M Van den Eeden,F Callens,et al. Transient microwave photoconductivity and computer simulation study of Ir³⁺- and Rh³⁺- doped AgCl microcrystal[J]. J.Imaging Sci.Tech.,1995,39(5):393-401.
[4] Hua J P,Callens F,et al. Transient photocoductivity study of shallow electron traps in [Ru(CN)₆]^4- doped AgCl microcrystals:effects of doping concentration position[J].J.Imaging Sci.,1999,47:71-79.
[5] Hua J P,Callens F,et al. Determination of capture cross sections and trap depths of dominant centers in AgCl microcrystals doped with [Ru(CN)₆]^4- complexes[J].J.Phys.D:Appl.Phys.,2000,33:574-583.
[6] Hua J P,Callens F,et al. Shallow electron traps induced by [Ru(CN)₆]^4- in AgCl microcrystals:a computer simulation study of transient microwave photoconductivity [J].J.Phys.D:Appl.Phys.,2000,33:564-573.
[7] Li X W,Geng A C,Yang S P,et al. Measurement of the time-resolved spectrum of photoelectrons from ZnS:Mn,Cu luminescent material[J].Chinese Physics Letters,2003,20(8):1323-1325.
[8] Mitchell J W. The trapping of electrons in crystals of silver halide [J]. Photographic Science and Engineer,1983,27:96.
[9] Wang R Q,et al. Electron trapping and recombination in cubic AgBr emulsion [J].The Journal of Photographic Science,1996,44:47-49.
[10] Myra T Olm,Raymond S Eachus. Deffects and the photographic process [J]. Radiation Effects and Defects in Solid,1999,150:71-78.
[11] Bennebroek M T,Arnold A,Poluektov O G,et al. Shallow electron centers in silver halide[J].Phys.Rev.B.,1996,54:11276-11289.
[12] Yang S P,et al. Characteristics of photoelectron decay of silver halide microcrystal illuminated by a short pulse laser[J]. Chinese Physics Letters,2002,19(3):429-431.

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