Imaging Science and Photochemistry ›› 2005, Vol. 23 ›› Issue (1): 48-54.DOI: 10.7517/j.issn.1674-0475.2005.01.48

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The Preparation and Properties of a Kind of Sulfonium Salt PAG Applicable for 193 nm Photoresist

WANG Wen-jun, LI Hua-min, WANG Li-yuan   

  1. Department of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
  • Received:2004-06-28 Revised:2004-08-30 Online:2005-01-23 Published:2005-01-23

Abstract: Several sulfonium salts with different anions containing naphthyl group were prepared. These compounds show high pyrolysis temperature and good solubilities in commonly used organic solvents. The UV absorption of the PAGs in aqueous solution and in polyethylene glycol film was measured. The PAGs containing no benzene group display good transparency at 193 nm. The photolysis properties of the PAGs exposed with lower pressure Hg lamp (254 nm) were investigated with rapid weakening of the absorption peak around 254 nm after exposure. These PAGs are applicable to deep UV, such as ArF(193 nm), chemically amplified photoresist.

Key words: photoacid generator, photoresist, chemical amplification, sulfonium salt

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