Solution processed thermally activated delayed fluorescence (TADF) light-emitting diodes have been fabricated with a yellow TADF material TXO-TPA as the guest and TCTA as the host, by combining the spin-coating method and vaccum deposition method in the device fabrication process. With the purpose of investigating the effect of electron-transporting material on device performance, we selected electron-transporting material from TmPyPB, TPBI,BCP and Alq3. By optimizing the device structure, high efficiency yellow TADF OLEDs by using TPBI as the electron-transporting material have been achieved. The excellent performance of TPBI can be attributed to its suitable HOMO/LUMO energy level, a high electron mobility and triplet energy level which favors electron transporting and triplet exciton blocking.The device using TPBI as an electron transporting material exhibited excellent performance with low drive voltage of 3.6 V, maximum current efficiency of 16.2 cd/A, EQE of 5.97%.