Abstract: Polycrystalline silicon films were fabricated by aluminum-induced crystallization.These films are prepared by plasma-enhanced chemical vapor deposition technology from hydrogen-diluted SiH₄ and B₂H₆.The effect of thickness of aluminum films on the microstructure and morphology were investigated.The results were analyzed by XRD,RAMAN and SEM.The thickness of aluminum film was found to play a critical role in the extent of crystallization of a-Si thin film.The experiment indicate that a-Si thin films with thickness of aluminum films for sputtering time 10 s were amorphous structure after annealing 450 ℃ for 20 min,a-Si films with thickness of aluminum film for sputtering time 20 s began to crystallize after annealing at 450 ℃ for 20 min,and the crystallinity of a-Si thin films was enhanced obviously with increment of thickness of aluminum films.

Key words: aluminum-induced crystallization, rapid thermal annealing, polycrystalline silicon thin films, amorphous silicon thin films