金属铝诱导法低温制备多晶硅薄膜

doi:10.7517/j.issn.1674-0475.2006.02.87

影像科学与光化学 ›› 2006, Vol. 24 ›› Issue (2): 87-92.DOI: 10.7517/j.issn.1674-0475.2006.02.87

金属铝诱导法低温制备多晶硅薄膜

夏冬林, 杨晟, 徐慢, 赵修建

武汉理工大学, 硅酸盐材料工程教育部重点实验室, 湖北, 武汉, 430070

收稿日期:2005-09-16 修回日期:2005-12-05 出版日期:2006-03-23 发布日期:2006-03-23
通讯作者: 夏冬林(1964- ),男,博士,副教授,主要从事薄膜太阳能电池材料与器件的研究,通讯联系人,Tel:027-87669729,E-mail:donglinxia@mail.whut.edu.cn.
基金资助:
武汉理工大学硅酸盐材料工程教育部重点实验室开放基金(SYSJJ2005-12)

Preparation of Polycrystalline Silicon Films by Aluminum-Induced Crystallization at Low Temperature

XIA Dong-lin, YANG Sheng, XU Man, ZHAO Xiu-jian

Key Laboratory of Silicate Materials Science and Engineering of Ministry of Education, Wuhan University of Technology, Wuhan 430074, Hubei, P. R. China

Received:2005-09-16 Revised:2005-12-05 Online:2006-03-23 Published:2006-03-23

摘要/Abstract

摘要： 以氢气稀释的硅烷(SiH₄)和硼烷(B₂H₆)为气源,利用等离子体增强化学气相沉积法(PECVD)制备出p型a-Si薄膜.采用铝诱导晶化技术对不同厚度的铝膜对a-Si薄膜晶化的影响进行了研究.实验中发现,铝膜溅射为10 s的非晶硅薄膜样品在450℃下退火10 min后,p型a-Si结构仍为非晶态,铝膜溅射为20 s的非晶硅薄膜在450℃下退火20 min后,p型a-Si薄膜开始晶化为poly-Si薄膜,并且铝膜厚度越厚,则a-Si薄膜晶化程度越强.

关键词: 金属铝诱导晶化, 快速退火, a-Si薄膜, poly-Si薄膜

Abstract: Polycrystalline silicon films were fabricated by aluminum-induced crystallization.These films are prepared by plasma-enhanced chemical vapor deposition technology from hydrogen-diluted SiH₄ and B₂H₆.The effect of thickness of aluminum films on the microstructure and morphology were investigated.The results were analyzed by XRD,RAMAN and SEM.The thickness of aluminum film was found to play a critical role in the extent of crystallization of a-Si thin film.The experiment indicate that a-Si thin films with thickness of aluminum films for sputtering time 10 s were amorphous structure after annealing 450 ℃ for 20 min,a-Si films with thickness of aluminum film for sputtering time 20 s began to crystallize after annealing at 450 ℃ for 20 min,and the crystallinity of a-Si thin films was enhanced obviously with increment of thickness of aluminum films.

Key words: aluminum-induced crystallization, rapid thermal annealing, polycrystalline silicon thin films, amorphous silicon thin films

中图分类号:

TN304

夏冬林, 杨晟, 徐慢, 赵修建. 金属铝诱导法低温制备多晶硅薄膜[J]. 影像科学与光化学, 2006, 24(2): 87-92.

XIA Dong-lin, YANG Sheng, XU Man, ZHAO Xiu-jian. Preparation of Polycrystalline Silicon Films by Aluminum-Induced Crystallization at Low Temperature[J]. Imaging Science and Photochemistry, 2006, 24(2): 87-92.

金属铝诱导法低温制备多晶硅薄膜

Preparation of Polycrystalline Silicon Films by Aluminum-Induced Crystallization at Low Temperature

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