Imaging Science and Photochemistry ›› 1986, Vol. 4 ›› Issue (2): 1-6.DOI: 10.7517/j.issn.1674-0475.1986.02.1
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YANG YONG-YUAN1, FENG SHU-JING1, GAO ZHI-MIN1, RESEARCH GROUP OF ELECTRON BEAM LITHOGRAPHY2
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Abstract: A dry developing electron beam resist was investigated. As a negative resist,it consists of PCHS (polycyclohexene sulfone) and diazide (2,6-di-(4'-azidobenzal)-4-methy-lcyclohexanone). It was found that PCHS-diazide resist has a sensitivity of 1.5×10-5 C/cm2,a resolution of less than 1μm and the contrast of about 1.43. The mechanism and the influence factor of dry development were discussed.
YANG YONG-YUAN, FENG SHU-JING, GAO ZHI-MIN, RESEARCH GROUP OF ELECTRON BEAM LITHOGRAPHY. DRY DEVELOPING ELECTRON BEAM RESIST——POLYCYCLOHEXENE-SULFONE AZIDES[J]. Imaging Science and Photochemistry, 1986, 4(2): 1-6.
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