Imaging Science and Photochemistry ›› 1988, Vol. 6 ›› Issue (1): 59-62.DOI: 10.7517/j.issn.1674-0475.1988.01.59
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LUO WEN-XIU, CHUN YU BAO-ZHU
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Abstract: Thin films of TiO2, Fe2O3, ZnO were prepared by pyrolyzing (C4H2O4Ti, Fe(C2H3)2, and Zn(C2H5)2 with the technique of Metallorganic Chemical .Vapor Deposition (MO-CVD). The structure of these films on p-type single crystal of silicon was analysed by X-ray diffraction measurement and high energy electron diffraction. The photoelectrochemical properties of these films on Si electrodes were studied. It was found that the photoresponse of the films was increased, and the rate of hydrogen evolution was increased also.
Key words: photoelectrochemistry, MO-CVD technique, thin film of metal oxide
LUO WEN-XIU, CHUN YU BAO-ZHU. TH1N FILMS OF METAL OXIDES PREPARED BY MO-CVD TECHNIQUE AND THEIR PHOTOELECTROCHEMICAL PROPERTIES[J]. Imaging Science and Photochemistry, 1988, 6(1): 59-62.
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