Abstract: In this paper a negative photoresist--polyvinyloxyethyl cinnamate, which has excellentproperties such as high resolution, high sensitivity, good adhesion, slight flagging after development, rare occurances of pin holes, high stability during storage and plasma incineration stripping was reported. Polyvinyloxyethyl cinnamate was polymerized by cationic polymerization, which was carried out at -75℃ and the boron trifluoride etherate was used as an initiator. Polyvinyloxyethyl cinnamate with high molecular weight and high yield can be obtained at low temperature, when purified monomer and coinitiator was used. The correlation Mark-Houwink equation for this polymer have been established by the measurement of frac-tionated samples with light scattering and viscometry methods. The finest line width of this photoresist is 0.5 μm and the useful line width in technique is≥1μm.

Key words: polyvinyloxyethyl cinnamate, Mark-Houwink Equation, resolving power