关键词: 光刻技术, 纳米器件, 分辨力增强, 光刻胶材料

Abstract: Optical lithography plays an important role within high volume manufacturing (HVM) of semiconductor devices. Most “State of the art” Fabs have implemented ArF immersion technology today. Double patterning, double exposure, and side-wall image transfer technology allow for the extension of ArF immersion into 32 nm half-pitch (HP) application. In order to fabricate finer patterns, it is necessary to develop new processes. EUV lithography is a leading next generation solution for 22 nm HP and beyond. In addition, alternative solutions such as nano-imprint lithography and mask-less technology are also being considered for advanced nodes, however, they are only in the development stage at this time and in their current state represent a lot of challenges for HVM. In this paper, an overview of lithography is described from the aspect of “Materials”. Additionally, future trends in lithography will be discussed.

Key words: lithography, nano devices, resolution enhancement, photo resist materials