光敏聚酰亚胺抗蚀剂的研究

doi:10.7517/j.issn.1674-0475.1999.04.334

影像科学与光化学 ›› 1999, Vol. 17 ›› Issue (4): 334-337.DOI: 10.7517/j.issn.1674-0475.1999.04.334

光敏聚酰亚胺抗蚀剂的研究

李加深¹, 李佐邦¹, 朱普坤¹, 杨丽芳¹, 李芳¹, 焦晓明², 成爱萍², 陈建军²

1. 河北工业大学化学工程学院, 天津300130;
2. 北京化学试剂研究所, 北京100022

收稿日期:1998-10-27 修回日期:1999-02-09 出版日期:1999-11-20 发布日期:1999-11-20
通讯作者: 李佐邦
基金资助:
国家自然科学基金(批准号:59472008)和河北省自然科学基金资助项目

STUDIES ON A KIND OF NEGATIVE PHOTORESIST BASED ON PHOTOSENSITIVE POLYIMIDES

LI Jiashen¹, LI Zuobang¹, ZHU Pukun¹, YANG Lifang¹, LI Fang¹, JIAO Xiaoming², CHENG Aiping², CHEN Jianjun ²

1. Hebei University of Technology, Tianjin 300130, P. R. China;
2. The Institute of Chemical Reagent, Beijing 100022, P. R. China

Received:1998-10-27 Revised:1999-02-09 Online:1999-11-20 Published:1999-11-20

摘要/Abstract

摘要： 光敏聚酰亚胺是近20年来随着微电子工业的发展而迅速崛起的一类新型高分子材料,它广泛应用于微电子领域,在航空航天等尖端工业中也有着重要用途.预亚胺化可溶性负性光敏聚酰亚胺光致抗蚀剂在简化光刻工艺,增强耐热性,提高图形留膜率等方面具有诱人的前景^[1~2].

关键词: 光敏聚酰亚胺, 光固化机理, 热失重, 光刻工艺

Abstract: A kind of negative photoresist, composed of photosensitive polyimides and N-methyl-2-pyrrolidone was formulated. The curing mechanism and the relationship of the properties and structure of PSPIs were studied. The results of TGA show that the PSPIs have excellent heat-resistance. Based on our research, the pattern with line-width as low as 2.5 μm was gained with the conventional UV photolithography under the optimum parameters.

Key words: photosensitive polyimide, curing mechanism, thermogravimtric analysis, photolithographic process

李加深, 李佐邦, 朱普坤, 杨丽芳, 李芳, 焦晓明, 成爱萍, 陈建军. 光敏聚酰亚胺抗蚀剂的研究[J]. 影像科学与光化学, 1999, 17(4): 334-337.

LI Jiashen, LI Zuobang, ZHU Pukun, YANG Lifang, LI Fang, JIAO Xiaoming, CHENG Aiping, CHEN Jianjun . STUDIES ON A KIND OF NEGATIVE PHOTORESIST BASED ON PHOTOSENSITIVE POLYIMIDES[J]. Imaging Science and Photochemistry, 1999, 17(4): 334-337.

光敏聚酰亚胺抗蚀剂的研究

STUDIES ON A KIND OF NEGATIVE PHOTORESIST BASED ON PHOTOSENSITIVE POLYIMIDES

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