Imaging Science and Photochemistry ›› 2001, Vol. 19 ›› Issue (1): 1-8.DOI: 10.7517/j.issn.1674-0475.2001.01.1

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ELECTRODEPOSITION OF CuInSe2 THIN FILMS

SHEN Cheng-min, ZHANG Xiao-gang, LI Hu-lin   

  1. Department of Chemistry, Lanzhou University, Lanzhou 730000, P.R.China
  • Received:2000-05-18 Revised:2000-07-07 Online:2001-02-20 Published:2001-02-20

Abstract: CuInSe2 films were deposited by potentiostatic on Ti electrode in the solution containing CuSO4, SeO2, In2(SO4)3 at pH=1.35. Deposition potential ranges were determined by linear sweep method. SEM indicated that uniform and compact films were obtained after complexing agents were added. XRD showed that the CuInSe2 films consisted of chalcopyrite phase and sphalerite phase and the intensity of diffraction peaks increased when complexing agents exist. Particle size of the films is about 250 nm and could be explained by the fact that each grain observed under the microscope is a cluster of submicroscopic crystallites.

Key words: electrodeposition, semiconductors, nanocrystalline films

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