Imaging Science and Photochemistry ›› 2003, Vol. 21 ›› Issue (3): 176-183.DOI: 10.7517/j.issn.1674-0475.2003.03.176

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PHOTOELECTRON ACTION IN THE SULFUR-SENSITIZED T-GRAINS AgBr I EMULSION

YANG Shao-peng, DONG Guo-yi, LU Xiao-dong, LI Xiao-wei, FU Guang-sheng   

  1. College of Physics Science and Technology, Hebei University, Baoding 071002, P.R.China
  • Received:2003-01-20 Revised:2003-03-16 Online:2003-05-23 Published:2003-05-23

Abstract: The decay characteristics of photoelectrons and shallow trapped electrons have been obtained in the sulfur sensitized AgBr I T-grains emulsion by microwave absorption and dielectric spectrum measure technique.The different results of different sensitizing time samples related to the effects of electron traps have been analyzed.It could be concluded that the sulfur sensitized centers will act as shallow electron traps at the time of 45 minutes,and act as deep electron traps with the continuous increase of sensitizing time.In addition,the relationships between the depths of different shallow traps and the decay times of shallow-electrons have been also discussed.

Key words: microwave absorption and dielectric spectrum measure technique, sulfur sensitization, electron trap, photoelectron

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