STUDY OF THE ELECTRIC PROPERTY OF THE SILVER IODO-BROMIDE T-GRAIN MICRO-CRYSTALS

doi:10.7517/j.issn.1674-0475.2004.02.114

Imaging Science and Photochemistry ›› 2004, Vol. 22 ›› Issue (2): 114-119.DOI: 10.7517/j.issn.1674-0475.2004.02.114

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STUDY OF THE ELECTRIC PROPERTY OF THE SILVER IODO-BROMIDE T-GRAIN MICRO-CRYSTALS

CAO Li-zhi, ZUANG Si-yong

Institute of Fine Chemicals, East China University of Science and Technology, Shanghai 200237, P.R. China

Received:2003-11-03 Revised:2003-12-10 Online:2004-03-23 Published:2004-03-23

Abstract

Abstract: The electron conductivity and hole conductivity of the silver iodo-bromide T-grain crystal doped with K₄[Fe(CN)₆] was determined with Wagner polarization.The effects of the temperature,the doping amount and the doping place on the electron conductivity and the hole conductivity were studied.The results showed that with the increase of the doping amount,the electron conductivity and hole conductivity increased indicating that the shallow electron dopant could restrain the recombination of the electrons and the holes effectively.The restraint effects of the dopant varied with the doping region.When the doping amount was kept constant,if the doping place was near the iodide region,the changes of the electron conductivity and hole conductivity were more obvious than that in other places.With the increase of the temperature,the electron conductivity and hole conductivity decreased.

Key words: T-grain crystal, electron conductivity, hole conductivity, shallow electron trapping dopant

CLC Number:

CAO Li-zhi, ZUANG Si-yong. STUDY OF THE ELECTRIC PROPERTY OF THE SILVER IODO-BROMIDE T-GRAIN MICRO-CRYSTALS[J]. Imaging Science and Photochemistry, 2004, 22(2): 114-119.

References

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STUDY OF THE ELECTRIC PROPERTY OF THE SILVER IODO-BROMIDE T-GRAIN MICRO-CRYSTALS

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