Fabrication of Silicon Nanowires Resonators with Silicon Layer Doped by High Concentration Boron

doi:10.7517/j.issn.1674-0475.2016.03.265

Abstract

Abstract:

Nanoelectromechanical systems (NEMS) were extensively studied due to their small volume, smart behavior and high reliability. The eigenfrequency of nanowire resonators could vibrate at very high frequencies (VHF), which possessed potential applications, including high performance sensors for mass, oscillators, and filter. However, to fabricate silicon nanowire resonators with uniform morphology, controllable structures, superb fabrication technique was required. Currently, it is urgent for a simple, repeatable, three-dimensional scale controllable silicon nanowire manufacturing process. In this article, a feasible IC compatible top-down process to fabricate silicon nanowires resonators based on heavy boron doping layer was studied. This process defined the controllable size of silicon nanowires using electron beam lithography and released the silicon nanowires resonators based on the etch-autostop of TMAH. SEM was used to characterize the prepared silicon nanowires resonators. The results demonstrated the reliability of the silicon nanowires fabricated based on heavy boron doping layer, which had uniform morphology and controllable, adjustable structures. This approach could generate silicon nanowires resonators at large area with controllable, high yield and low cost.

Key words: NEMS, nanomechanical resonators, silicon nanowires, top-down technology, oscillator

LIU Yang, ZHANG Mingliang, JI An, WANG Xiaodong, YANG Fuhua. Fabrication of Silicon Nanowires Resonators with Silicon Layer Doped by High Concentration Boron[J]. Imaging Science and Photochemistry, 2016, 34(3): 265-272.

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