溴碘化银T-颗粒晶体中的电子和空穴行为研究

doi:10.7517/j.issn.1674-0475.2004.02.114

影像科学与光化学 ›› 2004, Vol. 22 ›› Issue (2): 114-119.DOI: 10.7517/j.issn.1674-0475.2004.02.114

溴碘化银T-颗粒晶体中的电子和空穴行为研究

曹立志, 庄思永

华东理工大学, 精细化工研究所, 上海, 200237

收稿日期:2003-11-03 修回日期:2003-12-10 出版日期:2004-03-23 发布日期:2004-03-23
通讯作者: 庄思永(1940-), 男, 教授、博士生导师, 主要从事感光化学研究.
基金资助:
国家自然科学基金资助项目(20073013)

STUDY OF THE ELECTRIC PROPERTY OF THE SILVER IODO-BROMIDE T-GRAIN MICRO-CRYSTALS

CAO Li-zhi, ZUANG Si-yong

Institute of Fine Chemicals, East China University of Science and Technology, Shanghai 200237, P.R. China

Received:2003-11-03 Revised:2003-12-10 Online:2004-03-23 Published:2004-03-23

摘要/Abstract

摘要： 利用Wagner极化法研究了掺杂K₄[Fe(CN)₆]浅电子陷阱掺杂剂的溴碘化银T 颗粒晶体的电子电导率和空穴电导率,并与未掺杂的晶体样品进行对比,分别考察了实验温度、掺杂剂用量、掺杂位置等因素对实验结果的影响.结果表明,随掺杂剂用量的增加,晶体的电子电导率和空穴电导率都相应增加,这说明浅电子陷阱掺杂剂的掺杂有效地抑制了电子和空穴的复合.但其抑制作用却因掺杂位置的不同而不同,当掺杂量一定,掺杂剂掺在碘区附近时,晶体的电子电导率和空穴电导率的变化较明显.随着实验温度的增加,乳剂晶体的电子电导率和空穴电导率都下降.

关键词: T颗粒晶体, 电子电导率, 空穴电导率, 浅电子陷阱掺杂剂

Abstract: The electron conductivity and hole conductivity of the silver iodo-bromide T-grain crystal doped with K₄[Fe(CN)₆] was determined with Wagner polarization.The effects of the temperature,the doping amount and the doping place on the electron conductivity and the hole conductivity were studied.The results showed that with the increase of the doping amount,the electron conductivity and hole conductivity increased indicating that the shallow electron dopant could restrain the recombination of the electrons and the holes effectively.The restraint effects of the dopant varied with the doping region.When the doping amount was kept constant,if the doping place was near the iodide region,the changes of the electron conductivity and hole conductivity were more obvious than that in other places.With the increase of the temperature,the electron conductivity and hole conductivity decreased.

Key words: T-grain crystal, electron conductivity, hole conductivity, shallow electron trapping dopant

中图分类号:

曹立志, 庄思永. 溴碘化银T-颗粒晶体中的电子和空穴行为研究[J]. 影像科学与光化学, 2004, 22(2): 114-119.

CAO Li-zhi, ZUANG Si-yong. STUDY OF THE ELECTRIC PROPERTY OF THE SILVER IODO-BROMIDE T-GRAIN MICRO-CRYSTALS[J]. Imaging Science and Photochemistry, 2004, 22(2): 114-119.

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溴碘化银T-颗粒晶体中的电子和空穴行为研究

STUDY OF THE ELECTRIC PROPERTY OF THE SILVER IODO-BROMIDE T-GRAIN MICRO-CRYSTALS

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