掺硼p型非晶硅薄膜的制备及光学性能的表征

doi:10.7517/j.issn.1674-0475.2010.04.296

影像科学与光化学 ›› 2010, Vol. 28 ›› Issue (4): 296-304.DOI: 10.7517/j.issn.1674-0475.2010.04.296

掺硼p型非晶硅薄膜的制备及光学性能的表征

夏冬林, 王慧芳, 石正忠, 张兴良, 刘俊

武汉理工大学, 硅酸盐工程教育部重点实验室, 湖北武汉, 430070

收稿日期:2010-03-18 修回日期:2010-04-22 出版日期:2010-07-23 发布日期:2010-07-23
基金资助:
材料复合新技术国家重点实验室(武汉理工大学)开放基金(2010-KF-9);武汉市科技攻关(20061002037)

Preparation and Characterization of Boron-Doped p-type a-Si:H Thin Film

XIA Dong-lin, WANG Hui-fang, SHI Zheng-zhong, ZHANG Xing-liang, LIU Jun

Key Laboratory of Silicate Materials Science and Engineering, Ministry of Education, Wuhan University of Technology, Wuhan 430070, Hubei, P.R.China

Received:2010-03-18 Revised:2010-04-22 Online:2010-07-23 Published:2010-07-23

摘要/Abstract

摘要： 以高氢稀释的硅烷(SiH₄ )为反应气体,硼烷(B₂H₆)为掺杂气体,利用RF-PECVD方法,在玻璃衬底上制备出掺硼的氢化非晶硅(a-Si:H)薄膜,研究了硼掺杂量对氢化非晶硅(a-Si:H)薄膜的光学性能的影响.利用NKD-7000 W光学薄膜分析系统测试薄膜的透射谱和反射谱,并利用该系统的软件拟合得出薄膜的折射率、消光系数、吸收系数等光学性能参数,利用Tauc法计算掺硼的非晶硅薄膜的光学带隙.实验结果表明,随着硼掺杂量的增加,掺杂非晶硅薄膜样品在同一波长处的折射率先增大后减小,而且每一样品均随着入射光波长的增加而减小,在波长500 nm处的折射率均达到4.3以上;薄膜的消光系数和吸收系数随着硼掺杂量的增大而增大,在500 nm处的吸收系数可高达1.5×10⁵cm^-1.在实验的硼掺杂范围内,光学带隙从1.81 eV变化到1.71 eV.

关键词: RF-等离子体增强化学气相沉积方法, 非晶硅薄膜, 折射率, 消光系数, 吸收系数, 光学带隙

Abstract: The boron-doped amorphous silicon(a-Si:H)thin film was deposited on glass substrate by plasma enhanced chemical vapor deposition(PECVD).SiH₄ and B₂H₆ with high hydrogen dilution are used as the reactive gas and dopant gas,respectively.The transmission spectra and the reflection spectra of the films were measured by NKD thin film analysis system,the refractive index,extinction coefficient,absorption coefficient and other optical parameters of the films were fitted out and optical band gap of the samples were calculated using Tauc method.The results have shown that with the dopant increase,the refractive index of amorphous silicon thin film decreases as the light wavelength increases,and the refractive index at 500 nm wavelength was more than 4.3;and the absorption coefficient was as high as 1.5×10⁵ cm^-1 at 500 nm wavelength.Optical band gap of boron-doped amorphous silicon(a-Si:H)thin film ranges from 1.7 to 1.8 eV.In a word,it is necessary to reduce the dopant concentration to get the widow layer with low absorption.

Key words: RF-PECVD, amorphous silicon thin film, refractive, extinction coefficient, absorption coefficient, optical bandgap

中图分类号:

O484

夏冬林, 王慧芳, 石正忠, 张兴良, 刘俊. 掺硼p型非晶硅薄膜的制备及光学性能的表征[J]. 影像科学与光化学, 2010, 28(4): 296-304.

XIA Dong-lin, WANG Hui-fang, SHI Zheng-zhong, ZHANG Xing-liang, LIU Jun. Preparation and Characterization of Boron-Doped p-type a-Si:H Thin Film[J]. Imaging Science and Photochemistry, 2010, 28(4): 296-304.

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掺硼p型非晶硅薄膜的制备及光学性能的表征

Preparation and Characterization of Boron-Doped p-type a-Si:H Thin Film

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