沉积电位对电沉积ZnS薄膜的影响

doi:10.7517/j.issn.1674-0475.2012.02.129

影像科学与光化学 ›› 2012, Vol. 30 ›› Issue (2): 129-133.DOI: 10.7517/j.issn.1674-0475.2012.02.129

沉积电位对电沉积ZnS薄膜的影响

夏冬林, 雷盼, 石正忠, 徐俊

武汉理工大学硅酸盐建筑材料国家重点实验室, 湖北武汉 430070

收稿日期:2011-11-10 修回日期:2011-12-30 出版日期:2012-03-15 发布日期:2012-03-15
通讯作者: 夏冬林(1964-),男,副研究员,博士,主要从事薄膜太阳能电池材料与器件的研究,Tel: 027-87669729,E-mail:donglinxia@126.com.
基金资助:
国家自然科学基金重点项目(51032005);材料复合新技术国家重点实验室(武汉理工大学)开放基金(2010-KF-9).

Influences of Deposition Potential on ZnS Thin Films Prepared by Electrodeposition Technique

XIA Dong-lin, LEI Pan, SHI Zheng-zhong, XU Jun

State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, Hubei, P.R.China

Received:2011-11-10 Revised:2011-12-30 Online:2012-03-15 Published:2012-03-15

摘要/Abstract

摘要： 采用电沉积方法,在不同沉积电位条件下,在氧化锡铟(ITO)导电玻璃上沉积制备了ZnS薄膜,利用XRD、SEM和UV-VIS测试技术对在不同沉积电位所制备薄膜的晶相结构、表面微观形貌和光学性能进行了表征.研究结果表明:沉积电位在1.5 V—1.7 V范围内制备的ZnS薄膜呈非晶态,其可见光透过率从60 %降低到20 %,薄膜的光学带隙约为3.97 eV.在沉积电位为2.0 V条件下所沉积薄膜为ZnS结晶相和金属Zn混合相,薄膜透过率显著降低.

关键词: ZnS薄膜, 电沉积, 透过率, 光学带隙

Abstract: ZnS thin films were deposited on ITO glasses by electrodeposition. The microstructure and surface morphology of thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), UV-Vis spectrophotometer was used to evaluate the optical properties of thin films. Effects of deposition potential on the microstructure and optoelectronic properties of ZnS thin films were studied, and the results showed that ZnS thin films were amorphous when the deposition potential changed from 1.5 V to 1.7 V, and the visible transmittance of thin films gradually decreased from 60% to 20% with the deposition potential increasing from 1.5 V to 1.7 V. The optical bandgap of ZnS thin film is about 3.97 eV. The thin film was crystalline with metal Zn existing in the films and the visible transmittance of thin films markedly decreased under the deposition potential was 2.0 V.

Key words: ZnS thin film, electrodeposition, transmittance, optical bandgap

中图分类号:

O484

夏冬林, 雷盼, 石正忠, 徐俊. 沉积电位对电沉积ZnS薄膜的影响[J]. 影像科学与光化学, 2012, 30(2): 129-133.

XIA Dong-lin, LEI Pan, SHI Zheng-zhong, XU Jun. Influences of Deposition Potential on ZnS Thin Films Prepared by Electrodeposition Technique[J]. Imaging Science and Photochemistry, 2012, 30(2): 129-133.

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沉积电位对电沉积ZnS薄膜的影响

Influences of Deposition Potential on ZnS Thin Films Prepared by Electrodeposition Technique

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