电化学沉积制备半导体CuInSe2薄膜

doi:10.7517/j.issn.1674-0475.2001.01.1

影像科学与光化学 ›› 2001, Vol. 19 ›› Issue (1): 1-8.DOI: 10.7517/j.issn.1674-0475.2001.01.1

• 研究论文 • 下一篇

电化学沉积制备半导体CuInSe₂薄膜

申承民, 张校刚, 力虎林

兰州大学化学系, 兰州 730000

收稿日期:2000-05-18 修回日期:2000-07-07 出版日期:2001-02-20 发布日期:2001-02-20
基金资助:
国家自然科学基金资助项目(69871013)

ELECTRODEPOSITION OF CuInSe₂ THIN FILMS

SHEN Cheng-min, ZHANG Xiao-gang, LI Hu-lin

Department of Chemistry, Lanzhou University, Lanzhou 730000, P.R.China

Received:2000-05-18 Revised:2000-07-07 Online:2001-02-20 Published:2001-02-20

摘要/Abstract

摘要： 本文报道恒电位法在pH为1.35的Cu₂SO₄、SeO₂、In₂(SO₄)₃溶液中,在Ti电极上电化学沉积制备CuInSe₂纳米薄膜.研究络合剂柠檬酸和酒石酸对制备CuInSe₂纳米薄膜的影响.扫描电子显微镜(SEM)结果表明,加入络合剂后,电化学沉积的薄膜表面颗粒分布更均匀、致密.X射线衍射(XRD)分析显示,制备的CuInSe₂薄膜是黄铜矿和闪锌矿相的混和物,添加柠檬酸和酒石酸后,衍射峰增强,晶形变好.制备的薄膜颗粒尺寸大小在250nm左右,造成粒度增大的原因是由于颗粒的团聚作用.

关键词: 电沉积, 半导体, 纳米薄膜

Abstract: CuInSe₂ films were deposited by potentiostatic on Ti electrode in the solution containing CuSO₄, SeO₂, In₂(SO₄)₃ at pH=1.35. Deposition potential ranges were determined by linear sweep method. SEM indicated that uniform and compact films were obtained after complexing agents were added. XRD showed that the CuInSe₂ films consisted of chalcopyrite phase and sphalerite phase and the intensity of diffraction peaks increased when complexing agents exist. Particle size of the films is about 250 nm and could be explained by the fact that each grain observed under the microscope is a cluster of submicroscopic crystallites.

Key words: electrodeposition, semiconductors, nanocrystalline films

中图分类号:

申承民, 张校刚, 力虎林. 电化学沉积制备半导体CuInSe₂薄膜[J]. 影像科学与光化学, 2001, 19(1): 1-8.

SHEN Cheng-min, ZHANG Xiao-gang, LI Hu-lin . ELECTRODEPOSITION OF CuInSe₂ THIN FILMS[J]. Imaging Science and Photochemistry, 2001, 19(1): 1-8.

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电化学沉积制备半导体CuInSe₂薄膜

ELECTRODEPOSITION OF CuInSe₂ THIN FILMS

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