影像科学与光化学 ›› 2016, Vol. 34 ›› Issue (2): 152-158.DOI: 10.7517/j.issn.1674-0475.2016.02.152

• 论文 • 上一篇    下一篇

双极性碳纳米管薄膜晶体管构建及电性能研究

许威威1,2, 徐文亚2, 张祥2, 金晶1, 赵建文2, 崔铮2   

  1. 1. 上海大学 材料科学与工程学院, 上海 200444;
    2. 中国科学院 苏州纳米技术与纳米仿生研究所 印刷电子研究中心, 江苏 苏州 215123
  • 收稿日期:2015-12-09 修回日期:2016-01-10 出版日期:2016-03-15 发布日期:2016-03-15
  • 通讯作者: 赵建文,崔铮
  • 基金资助:

    国家自然基金青年基金项目(91123034, 61102046)和江苏省自然基金(BK2011364)资助

Fabrication and Electrical Properties of Ambipolar Thin Film Transistors(TFTs) Based on PFO-BT Sorted Semiconducting Single-walled Carbon Nanotubes

XU Weiwei1,2, XU Wenya2, ZHANG Xiang2, JIN Jing1, ZHAO Jianwen2, CUI Zheng2   

  1. 1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, P. R. China;
    2. Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, P. R. China
  • Received:2015-12-09 Revised:2016-01-10 Online:2016-03-15 Published:2016-03-15

摘要:

本文用聚 (PFO-BT)分离的半导体碳纳米管作为有源层,通过气溶胶喷墨打印技术在刚性基体上构建出底栅结构的碳纳米管薄膜晶体管器件。用钛酸钡复合材料封装后,碳纳米管薄膜晶体管表现出很好的双极性、较高的开关比和零回滞特性,同时阈值电压能够控制在0 V附近。通过两个双极性薄膜晶体管连接而成的反相器表现出零回滞、高电压增益(Vdd=1.5 V时,其增益可达到35)和大噪声容限(Vdd=1 V时,最大噪声容限为0.44 V)。

关键词: 印刷电子, 聚合物, 半导体碳纳米管, 薄膜晶体管, 双极性, 封装

Abstract:

This paper reported a valid method to fabricate ambipolar single-walled carbon nanotube (SWCNT) thin film transistors (TFTs) using BaTiO3 thin films as encapsulation layers. Carbon nanotube TFTs based on PFO-BT sorted sc-SWCNTs were firstly fabricated by aerosol jet printing. BaTiO3 thin films were then deposited on the top of the TFTs by spin-coating. After that, TFTs exhibited significant ambipolar properties with on-off ratio of 104-105, negligible hysteresis and threshold voltage of close to 0 V. Furthermore, the invert based on ambipolar TFTs showed high voltage gain of 35 at Vdd of 1.5 V and large noise margin of 0.44 V at Vdd of 1 V.

Key words: printed electronics, polymer, semiconducting carbon nanotube, thin-film transistor, ambipolar, encapsulation