影像科学与光化学 ›› 2007, Vol. 25 ›› Issue (1): 18-23.DOI: 10.7517/j.issn.1674-0475.2007.01.18

• 研究论文 • 上一篇    下一篇

ITO和ZnO基底对电化学沉积氧化亚铜薄膜的形貌、结构的影响及作用机制

王春祥, 张青, 薛敏钊, 盛巧蓉, 刘燕刚   

  1. 上海交通大学, 化学化工学院, 上海, 200240
  • 收稿日期:2006-07-10 修回日期:2006-08-14 出版日期:2007-01-23 发布日期:2007-01-23

Effects and Mechanism of ITO and ZnO Substrate on Surface Morgraphology and Structural of Electrodeposited Cu2O Thin Films

WANG Chun-xiang, ZHANG Qing, XUE Min-zhao, SHENG Qiao-rong, LIU Yan-gang   

  1. School of Chemistry and Chemical Engineering, Shanghai Jiaotong University, Shanghai 200240, P.R.China
  • Received:2006-07-10 Revised:2006-08-14 Online:2007-01-23 Published:2007-01-23

摘要: 采用电化学恒电位沉积方法在ITO导电玻璃上和在ZnO薄膜上沉积氧化亚铜(Cu2O),并通过X射线衍射(XRD)和扫描电镜(SEM)对晶体的微观结构和表面形貌进行了分析.在ZnO基底上沉积得到了纳米级的Cu2O粒子并且具有明显择优取向,而在ITO导电玻璃上仅得到粒径为2—5μm的Cu2O粒子,没有明显的择优取向.对薄膜的生长机理进行了讨论.

关键词: 氧化亚铜, 电沉积, 薄膜, 氧化锌

Abstract: The copper(Ⅰ) oxide(Cu2O) films were grown on ITO and ZnO substrate by electrochemical potentiostatic deposition.The surface morphology and the structure of the films were investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM).The nanocrystalline Cu2O grains have been formed on ZnO substrate with a preferential orientation,while the grain size for films grown on ITO ranges from 2 to 5 μm without a preferential orientation.The growth mechanism of the films is discussed.

Key words: cuprous oxide, electrodeposition, thin films, zinc oxide

中图分类号: