影像科学与光化学 ›› 2013, Vol. 31 ›› Issue (2): 150-156.DOI: 10.7517/j.issn.1674-0475.2013.02.008

• 研究简报 • 上一篇    

SnS薄膜的两步法制备及其光电性能研究

吉强, 沈鸿烈, 江丰, 王威, 曾友宏   

  1. 南京航空航天大学 材料科学与技术学院, 江苏 南京 210016
  • 收稿日期:2012-11-19 修回日期:2012-12-27 出版日期:2013-03-15 发布日期:2013-03-15
  • 通讯作者: 沈鸿烈,教授,E-mail:hlshen@nuaa.edu.cn.
  • 基金资助:
    国家自然科学基金资助项目(61176062);2011年大学生创新训练计划项目(国家级201210287048);江苏高校优势学科建设工程资助项目.

Research on the Optoelectronic Properties of SnS Thin Films Prepared by Two-Stage Process

JI Qiang, SHEN Hong-lie, JIANG Feng, WANG Wei, ZENG You-hong   

  1. College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, Jiangsu, P.R. China
  • Received:2012-11-19 Revised:2012-12-27 Online:2013-03-15 Published:2013-03-15

摘要: 用两步法制备了SnS薄膜,首先在玻璃衬底上用磁控溅射法沉积一层Sn薄膜,然后在220℃下加热炉中硫化60 min.对该薄膜进行结构、表面形貌和光电性能分析,结果表明:制备的SnS薄膜为p型导电,有明显的(040)方向择优取向;薄膜表面致密,S和Sn原子非常接近化学计量比;薄膜呈现高于5×104 cm-1的吸收系数和持续光电导效应,其直接带隙约为1.23 eV,适合作为太阳能电池的吸收层材料和用于制作光敏器件.

关键词: SnS薄膜, 两步法, 太阳能电池, 光电性能

Abstract: SnS thin films were prepared by two-stage process. Sn precursor layers were deposited on glass substrates by sputtering and followed by sulfurization of the metallic tin precursor layers at 220℃ in a furnace for 60 min. The characterization results of microstructures, composition and optical and electrical properties show that the SnS film presents p-type conductivity and has a (040) preferred grain orientation; SnS film has an orthorhombic structure, and the surface is uniform and density with the ratio of Sn to S close to 1. It is found that the film shows a high optical absorption coefficient of 5×104 cm-1 and persistent photoconductivity effect. It has a direct energy band gap of 1.23 eV. The prepared SnS film is useful as an absorption layer of solar cells and for fabrication of photo-sensitive device.

Key words: SnS films, two-stage process, solar cell, photoelectric properties

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