激子的增殖与第三代太阳能电池

doi:10.7517/j.issn.1674-0475.2013.03.001

摘要/Abstract

摘要： 通过激子增殖来提高太阳能电池的光-电转换效率是近年来颇受重视的一个研究方向.本文对激子增殖产生的途径与机制,以及在其形成过程中应注意的各种因素作了扼要的介绍和讨论,诸如:冲击离子化过程、声子瓶颈现象、热-电子的冷却过程、Auger重合过程,以及热-电子的电子转移过程等,同时也对检测这一过程的重要方法——瞬态(泵浦-探测)吸收光谱(TA)作了简要介绍,并通过某些实例对这一现象在作为第三代太阳能电池中光-电转换材料的半导体量子点内情况作了说明.

关键词: 激子的增殖, 量子点, 冲击离子化, 声子瓶颈, Auger重合, 第三代太阳能电池

Abstract: Recently, the pathway and the mechanism of exciton multification for improving the photo-electric conversion efficiency of solar cell become an important aspect with extensive attention. In this review, many factors such as the impact ionization, phonon bottleneck, cooling of hot-electron, electron transfer process and the Auger recombination, which may affect the formation of the second electron-hole pair in system have been discussed. Review is also briefly to introduce the method of (Pump-Probe) transient absorption spectrum (TA) measurement for studying the dynamic process of exciton multification. And several examples are listed for the illustration of this phenomenon in semi-conductor QD systems which have been applied as a new materials in the third generation of solar cell.

Key words: exciton multification, QD, compact ionization, phonon bottleneck, Auger recombination, third generation of solar cell

中图分类号:

吴世康. 激子的增殖与第三代太阳能电池[J]. 影像科学与光化学, 2013, 31(3): 161-174.

WU Shi-kang. The Exciton Multification and the Third Generation of Solar Cell[J]. Imaging Science and Photochemistry, 2013, 31(3): 161-174.

参考文献

[1] Shockley W,Queisser H. Detailed balance limit of efficiency of p-n junction solar cells[J]. J. Appl. Phys.,1961,32:510.
[2] Landsberg P T, Nussbaumer H,Willeke G. Band-band impact ionization and solar cell efficiency[J]. J. Appl. Phys.,1993, 74:1451.
[3] Werner J H,Kolodinski S,Queisser H J. Novel optimization principles and efficiency limits for semiconductor solar cells[J]. Phys. Rev. Lett.,1994, 72:3851-3854.
[4] McGuire J A,Jin Joo, Pietryga J M, Schaller R D,Klimov V I.New aspects of carrier multiplication in semiconductor nanocrystals[J]. Acc. Chem. Res., 2008, 41(12):1810-1819.
[5] Carlson T A. Photoelectron and Auger Spectroscopy[M]. New York: Plenum Press, 1975.
[6] Nozik A J,Beard M C,Luther J M,Law M,Ellingson R J,Johnson J C.Semiconductor quantum dots and quantum dot arrays and applications multiple exciton generation to third-generation photovoltaic solar cells[J]. Chem. Rev., 2010, 110:6873.
[7] Schaller R D, Sykora M, Pietryga J M,Klimov V I. Seven excitons at a cost of one: redefining the limits or conversion efficiency of photons into charge carriers[J]. Nano Lett., 2006, 6(3), 424-429.
[8] Schaller R D,Klimov V I.High efficiency carrier multification in PbSe nanocrystals: Implication for solar energy conversion[J]. Phys. Rev. Lett., 2004, 92:186601.
[9] Akihiro Ueda, Kazunari Matsuda, Takeshi Tayagaki, Yoshihiko Kanemitsu.Carrier multiplication in carbon nanotubes studied by femtosecond pump-probe spectroscopy[J]. Appl. Phys. Lett., 2008, 92:233105.Efros A L,Kharchenko V,Rosen A M.Breaking the phonon bottleneck in nanometer quantum dots: role of Auger-like processes[J]. Solid State Commun., 1995, 93: 281.
[10] Nozik A J. Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots[J]. Ann. Rev. Phys. Chem., 2001, 52:193.
[11] Rosenwaks Y,Hanna M C, Levi D H,Szmyd D M, Ahrenkiel R K, Nozik A J. Hot-carrier cooling in gaas: quantum wells versus bulk[J]. Phys. Rev. B, 1993, 48:14675.
[12] Pelouch W S,Ellingson R J,Powers P E,Tang C L,Szmyd D M,Nozik A J. Comparison of hot-carrier relaxation in quantum wells and bulk GaAs at high carrier densities[J]. Phys. Rev.B, 1992, 45:1450.
[13] Boudreaux D S,Williams F,Nozik A J. Hot carrier injection at semiconductor- electrolyte Junctions[J]. J. Appl. Phys., 1980, 51:2158.
[14] Benisty H,Sotomayor-Torres C M,Weisbuch C.Intrinsic mechanism for the poor luminescence properties of quantum-box systems[J]. Phys. Rev.B, 1991, 44:10945.
[15] Benisty H.Reduced electron-phonon relaxation rates in quantum-box systems:theoretical analysis[J]. Phys. Rev.B,1995, 51: 13281.
[16] Padney A,Guyot-Sionnest P.Slow electron cooling in colloidal quantum dots[J]. Science, 2008,322: 929.
[17] Sosnowski T S,Norris T B, Jiang H,Singh J,Kamath K,Bhattacharya P.Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy[J]. Phys. Rev. B, 1998,57: R9423.
[18] Diol S J,Poles E,Rosenwaks Y,Miller R J D. Electron transfer dynamics at GaAs surface quantum wells[J]. J. Phys. Chem. B,1998,102: 6193.
[19] Kempa K, Naughton M J,Ren Z F,Herczynski A,Kirkpatrick T,Rybczynski J,Gao Y. Hot electron effect in nanoscopically thin photovoltaic junctions[J]. Appl. Phys. Lett., 2009, 95:233121.
[20] Crooker S A, Barrick T, Hollingsworth J A, Klimov V I.Multiple temperature regimes of radiative decay in CdSe nanocrystal quantum dots: Intrinsic limits to the dark-exciton lifetime[J]. Appl. Phys. Lett., 2003,82: 2793.
[21] Klimov V I, Mikhailovsky A A, McBranch DW, Leatherdale C A,Bawendi M G. Quantization of multiparticle auger rates in semiconductor quantum dots[J]. Science, 2000, 287: 1011.
[22] Nozik A J.Exciton multiplication and relaxation dynamics in quantum dots: applications to ultrahigh-efficiency solar photon conversion[J]. Inorg. Chem., 2005,44: 6893.