影像科学与光化学 ›› 2020, Vol. 38 ›› Issue (4): 609-614.DOI: 10.7517/issn.1674-0475.200306

• 综述与论文 • 上一篇    下一篇

萘酚基酚醛树脂的合成及其在lift-off光刻胶中的应用

孙小侠1,2, 司树伟1,2, 郑祥飞1, 刘敬成1, 穆启道2   

  1. 1. 江南大学 化学与材料工程学院, 江苏 无锡 214122;
    2. 苏州瑞红电子化学品有限公司, 江苏 苏州 215124
  • 收稿日期:2020-03-06 出版日期:2020-07-15 发布日期:2020-07-15

Synthesis of Naphthol-based Phenolic Resins and Its Application in Lift-off Photoresist

SUN Xiaoxia1,2, SI Shuwei1,2, ZHENG Xiangfei1, LIU Jingcheng1, MU Qidao2   

  1. 1. School of Chemical and Materials Engineering, Jiangnan University, Wuxi 214122, Jiangsu, P. R. China;
    2. Suzhou Ruihong Electronic Chemical Co., Ltd., Suzhou 215124, Jiangsu, P. R. China
  • Received:2020-03-06 Online:2020-07-15 Published:2020-07-15

摘要: 首先以α-萘酚、间甲酚、甲醛为单体,通过缩聚反应合成了萘酚基酚醛树脂NAPR,随后与二碳酸二叔丁酯(DBDC)反应制备了一系列t-BOC改性的萘酚基酚醛树脂NAPR-BOC。用红外(FT-IR)、核磁(1H NMR)、凝胶色谱(GPC)、热失重分析(TGA)对其结构及性能进行了表征。以NAPR-BOC-2为基体树脂配制成lift-off光刻胶,测试了光刻胶的分辨率、形貌和耐热性,得到的光刻胶分辨率最大为0.6 μm,耐热可达130℃。

关键词: α-萘酚, 酚醛树脂, 正性光刻胶, NAPR-BOC, lift-off

Abstract: Naphthol phenolic resins NAPR were synthesized through condensation of α-naphthol, m-cresol and formaldehyde, and the free phenolic hydroxyl groups of the resins were modified with BOC groups. FT-IR, 1H NMR, GPC, and TGA were used to characterize the structure and properties of the resins. Lift-off photoresist was prepared with NAPR-BOC-2 as matrix resin.The resolution, morphology and heat resistance of photoresist were tested, and the maximum resolution of the photoresist was 0.6 μm, and the heat resistance was up to 130℃.

Key words: α-naphthol, phenolic resin, positive photoresist, NAPR-BOC, lift-off