[1] 韩阶平,侯豪情.适用于剥离工艺的光刻胶图形的制作技术及其机理讨论[J].真空科学与技术,1994, 14(3):215-291.
[2] Bohland J F, Calabrese G S, Cronin M F, et al. Some resists based on chemically-amplified crosslinking of phenolic polymers[J]. Journal of Photopolymer Science and Technology, 1990, 3(3):355-373.
[3] Thackeray J W, Orsula G W, Rajaratnam M M, et al. Dissolution inhibition mechanism of ANR photoresists:crosslinking vs.-OH site consumption[C]. Advances in Resist Technology and Processing Ⅷ. International Society for Optics and Photonics, 1991, 1466:39-52.
[4] Obeng Y S, Raghavan R S.‘back end’ Chemical cleaning in integrated circuit fabrication:a tutorial[J]. MRS Online Proceedings Library Archive, 1997, 477:145-157.
[5] Dammel R. Diazonaphthoquinone-based Resists[M]. SPIE Press,1993.
[6] Noda K, Furihata T, Kato H. Lift-off resist compositions[P].US Patent, 6558867. 2003-5-6.
[7] Golden J, Miller H, Nawrocki D, et al. Optimization of bi-layer lift-off resist process[J]. CS Mantech Technical Digest, 2009.
[8] Tam G. PMGI bi-layer lift-off process[P].US patent, 4814258. 1989-3-21.
[9] Ito H, Sherwood M. NMR analysis of chemically amplified resist films[C]. Advances in Resist Technology and Processing ⅩⅥ. International Society for Optics and Photonics, 1999, 3678:104-115.
[10] Ito H, Breyta G, Hofer D C, et al. Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization[C]. Advances in Resist Technology and Processing Ⅻ. International Society for Optics and Photonics, 1995, 2438:53-60.
[11] Nishikubo T, Kudo H, Suyama Y, et al. Novel noria (water wheel-like cyclic oligomer) derivative as a chemically amplified extreme ultraviolet (EUV)-resist material[J]. Journal of Photopolymer Science and Technology, 2009, 22(1):73-76. |