Abstract: The surfaces of CdSe,CdeS_x,Te_1-x thin film electrodes and the interfaces between thin films and Ti substrates were investigated after annealing in N₂ atmosphere containing different content of O₂ by X-ray Electron Spectroscopy.It was found that the oxides such as CdO,SeO₂,TeO₂ were formed on the surfaces of both thin films and TiO₂ was formed on Ti substrate surfaces which contact with thin films.Auger Electron Spectroscopy were used for depth analysis.The results showed that there were differences in degree and in thickness for oxides formation.The influencing factors on photoelectr ochemical behaviour of the thin film electrodes were discussed.

Key words: thin film electrodes, XPS, AES, surface analysis, photo-electric conversion