SPECTRAL AND ELECTROCHEMICAL STUDY ON LIGHT-EMITTING POROUS SILICON

doi:10.7517/j.issn.1674-0475.1993.03.272

Imaging Science and Photochemistry ›› 1993, Vol. 11 ›› Issue (3): 272-274.DOI: 10.7517/j.issn.1674-0475.1993.03.272

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SPECTRAL AND ELECTROCHEMICAL STUDY ON LIGHT-EMITTING POROUS SILICON

LI XUE-PING, ZHANG ZHEN-ZHONG, WANG WEI-BO, LIU YAO, XIAO XU-RUI

The Center of Photoelectrochemistry, Institute of Photographic Chemistry, Academia Sinica, Beijing 100101, P. R. China

Received:1993-04-07 Revised:1993-04-16 Online:1993-08-20 Published:1993-08-20

Abstract

Abstract: The light emitting properties of porous silicon formed by electrochemical etching process and the potential distribution at the Si/electrolyte (HF) interface have been studied. The results show that porous silicon photoluminescent properties are sensitive to the formation conditions. During anodic oxidation, selective dissolution of silicon that leads to porous structure formation has significant influence on the interface capacitance characteristics.

Key words: porous silicon, photoluminescence, electrochemistry

LI XUE-PING, ZHANG ZHEN-ZHONG, WANG WEI-BO, LIU YAO, XIAO XU-RUI. SPECTRAL AND ELECTROCHEMICAL STUDY ON LIGHT-EMITTING POROUS SILICON[J]. Imaging Science and Photochemistry, 1993, 11(3): 272-274.

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SPECTRAL AND ELECTROCHEMICAL STUDY ON LIGHT-EMITTING POROUS SILICON

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