Abstract: The current potential(I-V)and capacitance-potential(C-V)characterizations of p⁺, p^-, n⁺, and n^- silicon during the anodic dissolution in HF solutions were studied. There is a strong dependence of the silicon doping type and concentration on the anodic dissolution process of silicon in HF solutions. The rate of dissolution of silicon in HF solutions decreased in the order of p⁺>p^->n⁺>n^-.

Key words: porous silicon, current-potential characterizations, capacitance-potential characterizations