Abstract: The Al³⁺-doped ZnO transparent conducting films ZnO:Al(ZAO thin films) which have potential value with strongly preferred orientation of C-axis perpendicular to the substrate surface,high visible transmittance from 400—800 nm and high conductivity were prepared on glass substrates by Sol-Gel method.The influences that affected the films’ optical and electrical properties,such as the annealing temperature,the Al³⁺-doped quantity etc.were studied.The results proved that the best craft conditions to prepare ZAO thin films by Sol-Gel method were as follows: sol concentration 0.75 mol/L,doped quantity 1.5 atm%,coating layer 10 layers(thickness about 136 nm),annealing temperature 600 ℃.

Key words: Sol-Gel method, ZAO thin films, craft conditions