Imaging Science and Photochemistry ›› 2014, Vol. 32 ›› Issue (3): 260-266.DOI: 10.7517/j.issn.1674-0475.2014.03.260

Previous Articles     Next Articles

Optical and Electrical Properties of Printed Thin-film Transistors Based on Poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole](PFO-DBT) Sorted Semiconducting Single-walled Carbon Nanotubes

LIU Zhen1,2, XU Wenya2, QIAN Long2, ZHAO Jianwen2, CUI Zheng2   

  1. 1. School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning, P. R. China;
    2. Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, P. R. China
  • Received:2013-12-18 Revised:2014-01-20 Online:2014-05-15 Published:2014-05-15

Abstract:

In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using poly[2, 7-(9, 9-dioctylfluorene)-alt-4, 7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole](PFO-DBT) is presented. The sorted sc-SWCNTs inks have been directly used to fabricate thin film transistors (TFTs) by aerosol jet printing. Printed TFTs with effective mobility ~15.6 cm2·V-1·s-1 and on/off ratio ~107 have been achieved. In addition, all the printed devices exhibited rapid photocurrent response to light irradiation. TFTs based on PFO-DBT sorted sc-SWCNT exhibit good photoresponsive characteristics with good stability and rapid response.

Key words: sorted semiconducting carbon nanotube, Poly[2, 7-(9, 9-dioctylfluorene)-alt-4, 7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole](PFO-DBT), printable electronics, thin film transistor, optical and electrical properties