Fabrication and Electrical Properties of Fully Printed Thin-film Transistors Based on PFO-DPP Sorted Semiconducting Single-walled Carbon Nanotubes

doi:10.7517/j.issn.1674-0475.2016.02.136

Abstract

Abstract:

Printed top-gate carbon nanotube thin-film transistors (TFTs) and inverters were achieved on flexible substrates. Large-scale gold electrode arrays were constructed on PET substrates using nano-imprinting in combination with the brush electroplating technique. PF8DPP-soretd sc-SWCNTs, BaTiO₃ and printed silver electrodes were acted as the channel materials, the dielectric layer and the top gates, respectively. Printed top-gate TFTs exhibited good performance with mobility up to 6 cm²·V^-1·s^-1, on/off ratio of 10⁴ and free hysteresis. Furthermore, the voltage gain of the inverter can reach 12 at V_dd of 8V.

Key words: nano-imprinting, brush plating, semiconducting carbon nanotube, polymer, printed electronics, thin film transistor

ZHANG Xiang, FEI Fei, GUO Wenrui, NIE Shuhong, WU Liangzhuan, XIE Jianjun, ZHAO Jianwen, CUI Zheng. Fabrication and Electrical Properties of Fully Printed Thin-film Transistors Based on PFO-DPP Sorted Semiconducting Single-walled Carbon Nanotubes[J]. Imaging Science and Photochemistry, 2016, 34(2): 136-143.

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