影像科学与光化学 ›› 1991, Vol. 9 ›› Issue (3): 178-182.DOI: 10.7517/j.issn.1674-0475.1991.03.178

• 研究论文 • 上一篇    下一篇

Au修饰薄膜CdSe电极的界面动力学行为的研究

张志伟, 林原, 肖绪瑞   

  1. 中国科学院感光化学研究所, 北京 100101
  • 收稿日期:1989-09-19 修回日期:1990-12-04 出版日期:1991-08-20 发布日期:1991-08-20
  • 通讯作者: 肖绪瑞

STUDY ON INTERFACIAL KINETIC BEHAVIOURS OF Au MODIFIED CdSe THIN FILM ELECTRODES

ZHANG ZHI-WKI, LIN YUAN, XIAO XU-RUI   

  1. Institute of Photographic Chemistry, Academic Sinica, Beijing 100101, P. R. China
  • Received:1989-09-19 Revised:1990-12-04 Online:1991-08-20 Published:1991-08-20

摘要: 研究了Au修饰的薄膜CdSe电极在多硫溶液中的瞬态光电流行为,测量了界面异相电荷转移,表面电荷复合及光腐蚀反应速度常数KF,KRKc。结合了光电子能谱(XPS)及扫描电镜(SEM)表面分析,对三种不同Au量修饰的薄膜CdSe电极进行界面动力学行为的分析。

关键词: 化学修饰电极, 界面异相电荷转移, 表面电荷复合, 光腐蚀

Abstract: The transient photocurrent behaviours of Au modified CdSe thin film electrodes were studied in polysulfide solution.The reaction rate constants of interfacial heterogeneous charge transfer KF, surface charge recombination KR and photocorrosion Kc were estimated.Combining with the surface analysis of XPS and SEM, the interfacial kinetic behaviours of Au modified CdSe thin film electrodes were analysed.

Key words: Chemical modification, interfacial charge transfer, surface charge recombination, photocorrosion