NiNb2O6半导体电极的能级结构和腐蚀机理研究

doi:10.7517/j.issn.1674-0475.1994.03.207

影像科学与光化学 ›› 1994, Vol. 12 ›› Issue (3): 207-213.DOI: 10.7517/j.issn.1674-0475.1994.03.207

NiNb₂O₆半导体电极的能级结构和腐蚀机理研究

李果华¹, 李国昌²

1. 石家庄铁道学院基础部, 石家庄050043;
2. 河北轻工化工学院基础部, 石家庄050018

收稿日期:1995-05-19 修回日期:1994-01-31 出版日期:1994-08-20 发布日期:1994-08-20
通讯作者: 李国昌

THE INVESTIGATION ON THE ENERGY STRUCTURES AND THE CORROSION MECHANISM OF NiNb₂O₆ SEMICONDUCTOR ELECTRODE

LI GUO-HUA¹, LI GUO-CHANG²

1. Department of Fundamental Courses, Shijiazhuang Railway Institute, Shijiazhuang 050043;
2. Department of Fundamental Courses, Hebei Chemical Engineering Institute, Shijiazhuang 050018

Received:1995-05-19 Revised:1994-01-31 Online:1994-08-20 Published:1994-08-20

摘要/Abstract

摘要： 本文通过测量伏安特性和光谱响应研究了被还原的n型NiNb₂O₆半导体单晶电极的光电化学性质及其能级结构,观察到两个吸收带,强者在3.24eV,对应于氧-锯跃迁;弱者在1.75eV,在可见光区,对应于镍-铌跃迁。探讨了阳极暗腐蚀、光腐蚀和水的光电解机理,绘出了NiNb₂O₆的电子能级图和主要的裂解能级。

关键词: 半导体光电化学, 暗腐蚀, 光腐蚀

Abstract: In this paper the Photoelectrochemical behaviour and the energy level construction of the reduced n-NiNb₂O₆ semiconductor single crystal electrodes were studied by measuringthe current-potential characteristics and the spectral responses.Two absorption bands were observed,the most intense at 3.24eV being due to oxygen-niobium photoexcitation,the other at 1.75eV in the visible region and being due to nickel-niobium charge transfer.The mechanism of anode dark corrosion,photrvcorrosion,and photoelectrolysis were discussedand the NiNb₂O₆ electron energy diagram and the major band cleavage energy levels were also given out.

Key words: semiconductor photoelectrochemistry, dark corrosion, photo-corrosion

李果华, 李国昌. NiNb₂O₆半导体电极的能级结构和腐蚀机理研究[J]. 影像科学与光化学, 1994, 12(3): 207-213.

LI GUO-HUA, LI GUO-CHANG. THE INVESTIGATION ON THE ENERGY STRUCTURES AND THE CORROSION MECHANISM OF NiNb₂O₆ SEMICONDUCTOR ELECTRODE[J]. Imaging Science and Photochemistry, 1994, 12(3): 207-213.

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NiNb₂O₆半导体电极的能级结构和腐蚀机理研究

THE INVESTIGATION ON THE ENERGY STRUCTURES AND THE CORROSION MECHANISM OF NiNb₂O₆ SEMICONDUCTOR ELECTRODE

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