影像科学与光化学 ›› 2007, Vol. 25 ›› Issue (1): 63-68.DOI: 10.7517/j.issn.1674-0475.2007.01.63

• 研究简报 • 上一篇    下一篇

溶胶-凝胶方法制备ZnO:Al薄膜及其制备工艺条件研究

王炜1, 王波涛1, 董晓刚1, 薛钰芝2   

  1. 1. 大连交通大学, 环境与化学工程学院, 辽宁, 大连, 116028;
    2. 大连交通大学, 材料科学与工程学院, 辽宁, 大连, 116028
  • 收稿日期:2006-07-20 修回日期:2006-09-15 出版日期:2007-01-23 发布日期:2007-01-23
  • 通讯作者: 王炜(1962-), 男, 教授, 主要从事环境光化学与电化学方面的研究工作, Tel:0411-84106731.

Preparation of the ZnO:Al Thin Films by Sol-Gel and Study on Their Preparation Technics Conditions

WANG Wei1, WANG Bo-tao1, DONG Xiao-gang1, XUE Yu-zhi2   

  1. 1. Institute of Environment and Chemistry Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning, P.R.China;
    2. Institute of Material Science and Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning, P.R.China
  • Received:2006-07-20 Revised:2006-09-15 Online:2007-01-23 Published:2007-01-23

摘要: 采用Sol-Gel工艺在玻璃基片上制备出C轴择优取向性、高可见光透过率以及高电导率的Al3+离子掺杂的ZnO透明导电薄膜ZnO:Al(ZAO薄膜).并研究了退火温度、Al掺杂量等对其光电性能的影响.结果表明,溶胶-凝胶法制备ZAO薄膜的最佳工艺条件为:溶胶浓度0.75 mol/L、掺杂量1.5 atm%,镀膜层数10层(厚度约为136 nm)、退火温度600℃.

关键词: 溶胶-凝胶, ZAO薄膜, 工艺条件

Abstract: The Al3+-doped ZnO transparent conducting films ZnO:Al(ZAO thin films) which have potential value with strongly preferred orientation of C-axis perpendicular to the substrate surface,high visible transmittance from 400—800 nm and high conductivity were prepared on glass substrates by Sol-Gel method.The influences that affected the films’ optical and electrical properties,such as the annealing temperature,the Al3+-doped quantity etc.were studied.The results proved that the best craft conditions to prepare ZAO thin films by Sol-Gel method were as follows: sol concentration 0.75 mol/L,doped quantity 1.5 atm%,coating layer 10 layers(thickness about 136 nm),annealing temperature 600 ℃.

Key words: Sol-Gel method, ZAO thin films, craft conditions

中图分类号: