芘分子共价修饰的硅纳米线制备及其发光性能表征

doi:10.7517/j.issn.1674-0475.2011.02.108

影像科学与光化学 ›› 2011, Vol. 29 ›› Issue (2): 108-113.DOI: 10.7517/j.issn.1674-0475.2011.02.108

芘分子共价修饰的硅纳米线制备及其发光性能表征

赵文超, 王建涛, 王辉, 张晓宏

中国科学院理化技术研究所纳米有机光电子实验室, 北京100190

收稿日期:2010-11-23 修回日期:2011-01-30 出版日期:2011-03-23 发布日期:2011-03-23
通讯作者: 张晓宏, 研究员, Tel:010-82543510
基金资助:
国家自然科学基金(50972190)

Synthesis and Fluorescence Behavior of Pyrene Decorated Silicon Nanowires

ZHAO Wen-chao, WANG Jian-tao, WANG Hui, ZHANG Xiao-hong

Nano-organic Photoelectric Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R.China

Received:2010-11-23 Revised:2011-01-30 Online:2011-03-23 Published:2011-03-23

摘要/Abstract

摘要： 将功能分子共价链接于硅纳米线表面,是发展硅纳米线性能,获得新的硅纳米线器件材料的重要手段.但是对硅纳米线表面的修饰却存在产生不可控制的表面氧化层的缺点,因此有必要发展一种温和的新方法.本文通过羟基(—OH)与硅纳米线表面Si—H键反应生成Si—O—C键,从而在硅纳米线表面引入功能分子.并通过芘醇分子在硅纳米线表面的固定化,证明了这一方法能够温和地实现对硅纳米线表面的共价键修饰.

关键词: 硅纳米线, 表面修饰, 芘

Abstract: Covalent anchoring functional molecule to the silicon nanowire surface is one of the important strategy to obtain novel nanomaterials for silicon nanodevice.But a serious problem for this surface modified is the uncontrollably oxide of the surface of silicon nanowire in the modification process.Therefore,it is highly desired to find a mild method for the modification of silicon nanowires.In this paper,we covalently attached pyrene molecules onto the silicon nanowires’ surface through forming Si—O—C bond via reaction of Hydroxyl-(from the functional molecule) with Si—H(on the silicon nanowire surface).The product was characterized by ATR-FTIR;in addition,its fluorescence behavior was also investigated.

Key words: silicon, nanowires, pyrene, surface modification

中图分类号:

赵文超, 王建涛, 王辉, 张晓宏. 芘分子共价修饰的硅纳米线制备及其发光性能表征[J]. 影像科学与光化学, 2011, 29(2): 108-113.

ZHAO Wen-chao, WANG Jian-tao, WANG Hui, ZHANG Xiao-hong. Synthesis and Fluorescence Behavior of Pyrene Decorated Silicon Nanowires[J]. Imaging Science and Photochemistry, 2011, 29(2): 108-113.

参考文献

[1] Ming X,Huang H,Zorman C A,Mehregany M,Roukes M L.Nanoelectromechanical systems:Nanodevicemotion at microwave frequencies[J].Nature,2003,421:496-496.
[2] Hahm J I,Lieber C M.Direct ultrasensitive electrical detection of DNA and DNA sequence variations usingnanowire nanosensors[J].Nano Lett.,2004,4:51 54.
[3] Cui Y,Wei Q Q,Park H K,Lieber C M.Nanowire nanosensors for highly sensitive and selective detection ofbiological and chemical species[J].Science,2001,293:1289-1292.
[4] Schmidt V,Riel H,Senz S,Karg S,Riess W,Goele U.Realization of a silicon nanowire vertical surround-gatefield-effect transistor[J].Small,2006,2:85-88.
[5] Chen L J.Silicon nanowires:the key building block for future electronic devices[J].J.Mater.Chem.,2007,17:4639-4643.
[6] Huang Y,Duan X F,Cui Y,Lauhon L J,Kim K H,Lieber C M.Logic gates and computation from assemblednanowire building blocks[J].Science,2001,294:1313-1317.
[7] Ruffo R,Hong S S,Chan C K,Huggins R A,Cui Y.Impedance analysis of silicon nanowire lithium ion batteryanodes[J].J.Phys.Chem.C,2009,113:11390-11398.
[8] Cui L F,Ruffo R,Chan C K,Peng H L,Cui Y.Crystalline-amorphous core-shell silicon nanowires for high ca-pacity and high current battery electrodes[J].Nano Lett.,2009,9:491-495.
[9] Jie J S,Zhang W J,Peng K Q,Yuan G D,Lee C S,Lee S T.Surface-dominated transport properties of siliconnanowires[J].Adv.Funct.Mater.,2008,18:3251-3257.
[10] Cui Y,Zhong Z H,Wang D L,Wang W U,Lieber C M.High performance silicon nanowire field effect tran-sistors[J].Nano Lett.,2003,3:149-152.
[11] Wang H,Zhang X H,Meng X M,Zhou S M,Wu S K,Shi W S,Lee S T.Bulk preparation of Si-SiOx hierar-chical structures:high-density radially oriented amorphous silica nanowires on a single-crystal silicon nanocore[J].Angew.Chem.Int.Ed.,2005,44:6934-6937.
[12] Kim N Y,Laibinis P E.Thermal derivatization of porous silicon with alcohols[J] ,J.Am.Chem.Soc.,1997,119:2297-2298.
[13] Dean J A.Lange’s Handbook of Chemistry[M].15^th edition.New York:Mc Graw-Hill Professional.1999.
[14] 赵瑶玉,孙祥玉.有机分子结构光谱鉴定[M].北京:科学出版社.2003.Zhao Y Y,Sun X Y.Structural Identification of Organic Molecular[M].Beijing:Science Press.2003.
[15] Lenfant S,Guerin D,Van F T,Chevrot C,Palacin S,Bourgoin J P,Bouloussa O,Rondelez F,Vuillaume D.Elec-tron transport through rectifying self-assembled monolayer diodes on silicon:fermi-level pinning at the mole-cule-metal interface[J].J.Phys.Chem.B,2006,110:13947-13598.

芘分子共价修饰的硅纳米线制备及其发光性能表征

Synthesis and Fluorescence Behavior of Pyrene Decorated Silicon Nanowires

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