基于浓硼扩散层的硅纳米线谐振子制备

doi:10.7517/j.issn.1674-0475.2016.03.265

影像科学与光化学 ›› 2016, Vol. 34 ›› Issue (3): 265-272.DOI: 10.7517/j.issn.1674-0475.2016.03.265

基于浓硼扩散层的硅纳米线谐振子制备

刘杨, 张明亮, 季安, 王晓东, 杨富华

中国科学院半导体研究所集成技术工程研究中心, 北京 100083

收稿日期:2016-03-03 修回日期:2016-04-08 出版日期:2016-05-15 发布日期:2016-05-15
通讯作者: 张明亮, 王晓东
基金资助:
国家自然科学基金项目(61474115、61404128、61372059、61274066)和国家高技术研究发展计划项目(863项目,2014AA032302)资助z

Fabrication of Silicon Nanowires Resonators with Silicon Layer Doped by High Concentration Boron

LIU Yang, ZHANG Mingliang, JI An, WANG Xiaodong, YANG Fuhua

Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China

Received:2016-03-03 Revised:2016-04-08 Online:2016-05-15 Published:2016-05-15

摘要/Abstract

摘要：

纳机电系统(NMES)由于具有体积小、智能化、可靠性高等优点而被广泛研究。其中纳米线谐振子的本征频率能够达到MHz甚至GHz,可应用于各种高性能的质量传感器、谐振器、滤波器等。但是,要制备形貌规则可控的纳米线谐振子,对加工技术要求很高。目前急需一种工艺简单、重复性好、三维尺度可控的硅纳米线制备方法。本文重点研究了基于浓硼扩散层的可集成硅纳米线谐振子的制备方法。该方法采用电子束光刻定义可控尺度硅纳米线,并利用TMAH腐蚀自停止效应实现谐振子的释放。文中还采用SEM对所制备的纳米线谐振子进行了表征。实验结果表明,基于浓硼扩散层制备的硅纳米线谐振子形貌规则,结构可控可调。该方法能够实现可控制的大面积、高产率、低成本、可集成的硅纳米线谐振子制备。

关键词: 纳机电系统(NMES), 硅纳米线, 自上而下法, 谐振子

Abstract:

Nanoelectromechanical systems (NEMS) were extensively studied due to their small volume, smart behavior and high reliability. The eigenfrequency of nanowire resonators could vibrate at very high frequencies (VHF), which possessed potential applications, including high performance sensors for mass, oscillators, and filter. However, to fabricate silicon nanowire resonators with uniform morphology, controllable structures, superb fabrication technique was required. Currently, it is urgent for a simple, repeatable, three-dimensional scale controllable silicon nanowire manufacturing process. In this article, a feasible IC compatible top-down process to fabricate silicon nanowires resonators based on heavy boron doping layer was studied. This process defined the controllable size of silicon nanowires using electron beam lithography and released the silicon nanowires resonators based on the etch-autostop of TMAH. SEM was used to characterize the prepared silicon nanowires resonators. The results demonstrated the reliability of the silicon nanowires fabricated based on heavy boron doping layer, which had uniform morphology and controllable, adjustable structures. This approach could generate silicon nanowires resonators at large area with controllable, high yield and low cost.

Key words: NEMS, nanomechanical resonators, silicon nanowires, top-down technology, oscillator

刘杨, 张明亮, 季安, 王晓东, 杨富华. 基于浓硼扩散层的硅纳米线谐振子制备[J]. 影像科学与光化学, 2016, 34(3): 265-272.

LIU Yang, ZHANG Mingliang, JI An, WANG Xiaodong, YANG Fuhua. Fabrication of Silicon Nanowires Resonators with Silicon Layer Doped by High Concentration Boron[J]. Imaging Science and Photochemistry, 2016, 34(3): 265-272.

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基于浓硼扩散层的硅纳米线谐振子制备

Fabrication of Silicon Nanowires Resonators with Silicon Layer Doped by High Concentration Boron

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