影像科学与光化学 ›› 2013, Vol. 31 ›› Issue (5): 349-360.DOI: 10.7517/j.issn.1674-0475.2013.05.349

• 研究论文 • 上一篇    下一篇

一种248 nm光刻胶成膜树脂的合成及相关性能研究

刘建国, 蒋明, 曾晓雁   

  1. 华中科技大学 武汉光电国家实验室 激光与太赫兹技术功能实验室, 湖北 武汉 430074
  • 收稿日期:2013-03-06 修回日期:2013-06-21 出版日期:2013-09-15 发布日期:2013-09-15
  • 通讯作者: 刘建国(1973-),男,博士,副研究员,主要从事光电材料化学与激光先进制造技术的研究,E-mail:liujg@mail.hust.edu.cn.
  • 作者简介:刘建国(1973-),男,博士,副研究员,主要从事光电材料化学与激光先进制造技术的研究,E-mail:liujg@mail.hust.edu.cn.
  • 基金资助:

    国家自然科学基金面上项目(51172081);重点项目(51135005);中央高校基本科研业务费资助(2013TS044).

Research on the Synthesis and Properties of a Matrix Resin to be Used for 248 nm Photoresist

LIU Jian-guo, JIANG Ming, ZENG Xiao-yan   

  1. Functional Laboratory of Laser and Terahertz Technology, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, Hubei, P. R. China
  • Received:2013-03-06 Revised:2013-06-21 Online:2013-09-15 Published:2013-09-15

摘要:

通过自由基共聚合,制备了前驱体共聚物聚对特丁氧酰氧基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯,该共聚物可以通过热解而部分脱除酚羟基上的保护基,得到目标共聚物聚对羟基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯-共-对特丁氧酰氧基苯乙烯.通过对具有合适分子量的目标共聚物的有机溶剂溶解性、热性能、成膜性、抗干蚀刻能力和在248 nm处光学吸收(为0.212 μm-1)性能进行研究,表明该聚合物能满足248 nm光刻胶成膜树脂的要求;此外,目标共聚物还具有酸致脱保性能.具有合适分子量和脱保率的目标共聚物,通过对其酸解留膜率的测试,推测其可能满足248 nm光刻胶的曝光显影工艺过程.

关键词: 248 nm光刻胶, 成膜树脂, 聚对羟基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯-共-对特丁氧酰氧基苯乙烯

Abstract:

Precursor copolymer poly(p-tert-butoxycarbonyloxystyrene-co-N-hydroxy-5-norbornene-2,3-dicarboximido methacrylate) was prepared by free radical copolymerization of monomers p-tert-butoxycarbonyloxystyrene and N-hydroxy-5-norbornene-2,3-dicarboximido methacrylate. Target copolymer poly (p-hydroxystyrene-co-N-hydroxy-5-norbornene-2,3-dicarboximidomethacrylate-co-p-tert-butoxycarbonyloxystyrene) could be obtained by pyrolysis from the partial removal of the protective group tert-butoxycarbonyl of phenolic hydroxyl. It showed that the target copolymer with an appropriate molecular weight could be used as the matrix resin of 248 nm photoresist because of its good solubility in organic solvent, thermostability, film-forming characteristics, dry etching resistance, and optic density of 0.212 μm-1 at 248 nm. In addition, the target copolymer had the property of acidolysis removal of the protective group. From the remaining film thickness ratio of the target copolymer after acidolysis, it could be inferred that the target polymer, with an appropriate molecular weight and an appropriate ratio of the protective group removal, could meet the requirements of exposure and development in the photolithographic processes of 248 nm photoresist.

Key words: 248 nm photoresist, matrix resin, poly (p-hydroxystyrene-co-N-hydroxy-5-norbornene-2,3-dicarboximido methacrylate-co-p-tert-butoxycarbonyloxystyrene)

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