[1] John H B. Optical lithography-thirty years and three orders of magnitude [J]. Proceedings of SPIE, 1997, 3049: 14-27.
[2] Ito H. Chemically amplified resist: past, present and future[J]. Proceedings of SPIE, 1999, 3678: 2-12.
[3] 穆启道,曹立新. 光刻技术的发展与光刻胶的应用[J]. 集成电路应用,2003,6:69-75. Mu Q D, Cao L X. Development of photolithographic technology and application of photoresist [J]. Applicatios of IC, 2003, 6: 69-75.
[4] 吴雄杰,裘霞敏. 我国化学电子品产业的发展状况及前景[J]. 浙江化工,2003,34(6):25-27. Wu X J, Qiu X M. Development and prospect of electronic chemicals industry in China [J]. Zhejiang Chemical Industry, 2003, 34(6): 25-27.
[5] 夏伟如,章 舒,夏 敏,等. 正性抗蚀剂用酚醛树脂的制备[J]. 化工时刊,2002,4:21-24. Xia W R, Zhang S, Xia M, et al. Preparation of cresol-formaldehyde resins used for making positive photoresist [J]. Chemical Industry Times, 2002, 4: 21-24.
[6] Strurtevant J, Conley W E. Photosensitization in dyed and undyed APEXE DUV resist [J]. Proceedings of SPIE, 1996, 2724: 273-279.
[7] Thackery J W, Orsula G W. Deep UV photoresist for 248 nm excimer laser photolithography [J]. Proceedings of SPIE, 1989, 1086: 34-44.
[8] Hayashi K I, Kikuchi H. Charateristics of new KrF excimer laser resist [J]. Proceedings of SPIE, 1990, 1262: 468-475.
[9] Harry F. Evaluation of resist materials for KrF excimer laser lithography [J]. Proceedings of SPIE, 1990, 1262: 331-343.
[10] Robert D A, Quan P L, Gregory M W, et al. New Chemistry in the design of chemistry amplified positive resists [J]. Proceedings of SPIE, 1993, 1925: 246-256.
[11] Willson C G, Dammel R A, Reiser A, et al. Photoresist materials: a historical perspective [J]. Proceedings of SPIE, 1997, 3049: 28-41.
[12] Ito H, Willson C G. Positive/negative mid UV resist with high thermal stability [J]. Proceedings of SPIE, 1987, 771: 24-30.
[13] Ito H, Pederson L A. Sensitive electron beam resist systems based on acid-catalyzed deprotection [J]. Proceedings of SPIE, 1989, 1086: 11-17.
[14] Colley W, Breyta G, Brunsvold B, et al. The lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP) [J]. Proceedings of SPIE, 1996, 2724: 34-60.
[15] Tanabe T, Kobayashi Y, Tsuji A. PED stabilized chemically amplified photoresist [J]. Proceedings of SPIE, 1996, 2724: 61-69.
[16] Choi S J, Jung S Y, Kim C H, et al. Design and properties of new deep-UV positive photoresist [J]. Proceedings of SPIE, 1996, 2724: 323-331.
[17] 刘建国,郑家燊,李 平. 聚羟基苯乙烯在光致抗蚀剂中的应用及其合成[J]. 感光科学与光化学,2006,24(1):67-74. Liu J G, Zheng J S, Li P. Application and syntheses of polyhydroxystyrene in deep UV photoresist [J]. Photographic Science and Photochemistry, 2006, 24(1): 67-74.
[18] Frechet J M J, Eichler E. Poly (p-tert-butoxycarbonyloxystyrene): a convenient precursor to p-hydroxystrene resins [J]. Polymer, 1983, 24(8): 995-1000.
[19] 刘建国,李 平,刘和平,等. 对特丁氧酰氧基苯乙烯的制备新方法[J]. 应用化学,2008, 25(4):424-428. Liu J G, Li P, Liu H P, et al. A novel synthesis of p-tert-butoxycarbonyloxystyrene [J]. Chinese Journal of Applied Chemistry, 2008, 25(4): 424-428.
[20] 刘建国,李 平,李 萍,等. 聚对羟基苯乙烯单体的中间体—对特丁氧酰氧基苯乙烯合成方法的改进[J]. 应用化学,2007,24(3):361-364. Liu J G, Li P, Li P, et al. Synthetic improment of p-tert-butoxycarbonyloxystyrene -intermediate of monomer of poly(p-hydroxystyrene) [J]. Chinese Journal of Applied Chemistry, 2007, 24(3): 361-364.
[21] 陆承勋,王东法,冯新德,等. N-丙烯酰氧-5-降冰片烯-2,3-双甲酰亚胺的合成及聚合[J]. 科学通报,1981,26(4):214-216. Lu C X, Wang D F, Feng X D, et al. Synthesis and polymerization of N-hydroxy-5-norbornene-2,3-dicarboximido methacrylate [J]. Chinese Science Bulletin, 1981, 26(4): 214-216.
[22] 复旦大学高分子科学系高分子科学研究所 编著. 高分子实验技术[M]. 上海:复旦大学出版社,1996. 318. Polymer Research Institute, Department of Polymer Science, Fudan University. Polymer Experiment Technology[M]. Shanghai: Fudan University Press, 1996. 318.
[23] 王春伟,李 弘,朱晓夏. 化学放大光刻胶高分子材料研究进展[J]. 高分子学报,2005,2:70-80. Wang C W, Li H, Zhu X X. Progress in the research of chemical amplified photoresist [J]. Polymer Bulletin, 2005, 2: 70-80.
[24] 武 玲,余尚先. 正性光致抗蚀剂主要成膜树脂—酚醛树脂[J]. 感光材料,1994,4:3-8, 43. Wu L, Yu S X. Main matrix resin for positive photoresist-phenolic resins [J]. Image Matererials, 1994, 4: 3-8, 43.
[25] Conley W. Consideration in the development of deep UV photoresist material & processes [J]. Proceedings of SPIE, 1995, 2438: 40-52. |