纳米压印抗蚀剂研究进展

doi:10.7517/j.issn.1674-0475.2008.02.148

摘要/Abstract

摘要： 纳米压印是最有希望的下一代纳米成像技术之一.基于其机械压印原理,纳米压印技术可以实现的图形分辨率超越了在别的传统技术中由光衍射或粒子束散射造成的局限.本文介绍纳米压印技术的基本原理,回顾了近期纳米压印抗蚀剂的研究进展.对影响抗蚀剂性能的主要因素进行讨论,包括玻璃化转化温度/热稳定性、粘度/平均分子量、抗蚀性能等.分别介绍了热压印和紫外压印的常见抗蚀剂材料,这些抗蚀剂的主要部分包括聚甲基丙烯酸甲酯(PM-MA)、有机硅改性的聚(甲基)丙烯酸酯、聚酰胺酯、聚二甲基硅烷、聚乙烯基醚化合物、环氧树脂等,并给出这些抗蚀剂体系的优、缺点.本文还介绍了纳米压印抗蚀剂面临的主要问题,对纳米压印技术的优势和问题作了小结.

关键词: 纳米压印, 抗蚀剂, 成像

Abstract: Nanoimprint is one of the most promising next generation nanolithography technologies. Based on the mechanical embossing principle, nanoimprint technique can achieve pattern resolutions beyond the limitations set by the light diffraction or beam scatterings in other conventional techniques. This article introduces the basic princeples of nanoimprint technology and reviews the recent progress in the study of nanoimprint resists. Main factors affecting the performance of resists, including Tg temperature/thermal stability, viscosity/average molecular weight, etch resistance, etc, are discussed. The common resist materials for thermal nanoimprint and ultroviolet nanoimprint are introduced respectively, main parts of the resists including polymethacrylate, organic silicon modified polyacrylate, hybrane, polydimethylsilane, compounds with vinyl ether group, epoxy resin, etc. The advantages and disadvantages of the resist systems are also presented. The main problems existing in nanoimprint resists are introduced. The advantages and problems of nanoimprint technique are summed up in this article.

Key words: nanoimprint, resist, lithography

中图分类号:

霍永恩, 贾越, 王力元. 纳米压印抗蚀剂研究进展[J]. 影像科学与光化学, 2008, 26(2): 148-156.

HUO Yong-en, JIA Yue, WANG Li-yuan. Progress of the Study on Nanoimprint Resists[J]. Imaging Science and Photochemistry, 2008, 26(2): 148-156.

参考文献

[1] 佟军民,胡松,余国彬.下一代光刻技术[J].电子工业专用设备,2005,34:27-33.Tong J M,Hu S,Yu GB.The next generationlithography[J].Equipment for Electronic Products Manufacturing,2005,34:27-33.
[2] Chou S Y,Krauss P R,Renstrom P.I mprint of sub25nmvias and trenches in polymers[J].Appl.Phys.Lett.,1995,67(21):3114-3116.
[3] Guo LJ.Recent progressin nanoi mprint technology andits applications[J].J.Phys.D:Appl.Phys.,2004,37:123-141.
[4] Yu Z N,Steven J S,Schablitsky S J,Chou S Y.Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoi mprint lithography[J].Applied Physics Letters,1999,74(16):2381-2383.
[5] Li MT,Wang J,Zhuang L,et al.Fabrication of circular optical structures with a 20nm mini mumfeature size using nanoi mprint lithography[J].Applied Physics Letters,2000,76(6):673-675.
[6] Loo Y L,Willett R L,Baldwin K W,et al.Additive,nanoscale patterning of metal fil ms with a stamp and a surfacechemistry mediated transfer process:Applications in plastic electronics[J].Applied Physics Letters,2002,81(3):562-564.
[7] Colburn M,Johnson S,Stewart M,et al.Step andflashi mprint lithography:a newapproachto high-resolution pat-terning[J].Proceedings of SPIE,1999,3676:379-389.
[8] Alkaisi M M,Blaikie R L,Mcnab S J.Lowtemperature nanoi mprint lithography using silicon nitride molds[J].Mi-croelectronic Engineering,2001,57-58:367-373.
[9] Taniguchi J,Tokano Y,Miyamoto I,et al.Diamond nanoi mprint lithography[J].Nanotechnology,2002,13:592-596.
[10] Chou S Y,Krauss P R,Renstrom P J.I mprint lithography with25-nanometer resolution[J].Science,1996,272:85-87.
[11] Sreenivasan S,Willson C,Schumaker N.Cost of ownership analysis for patterning using step and flash i mprint lithography[J].Proceedings of SPIE,2002,4688:903-909.
[12] Xia Y,Whitesides G M.Soft lithography[J].Annu.Rev.Mater.Sci.,1998,28:153-84.
[13] 司卫华,董晓文,顾文琪.纳米压印技术的工艺和图形精度研究[J].半导体光电,2006,27(4):441-444.Si WH,Dong X W,Gu W Q.Process and pattern precision in nano-i mprinting lithography[J].Semiconductor Optoelectronics,2006,27(4):441-444.
[14] Heyderman LJ,Schift H,David C,et al.Flowbehaviour of thin polymer fil ms usedfor hot embossinglithography[J].Microelectronic Engineering,2000,3/4:229-245.
[15] Guo LJ.Nanoi mprint lithography:Methods and material requirements[J].Adv.Mater.,2007,19:495-513.
[16] Gokan H,Esho S,Onishi Y.Dry etchresistance of organic materials[J].J.ElectrochemSoc,1983,130(1):143-146.
[17] Wang J J,Deng X G,Chen L.Free-space nano-optical devices andintegration:Design,fabrication,and manufac-turing[J].Bell Labs Technical Journal,2005,10(3):107-127.
[18] Ki m E K,Stewart MD,Wu K,et al.Vinyl ether formulations for step andflashi mprint lithography[J].J.Vac.Sci.Technol.B,2005,23(6):2967-2971.
[19] Chou S Y,Krauss P R,RenstromPJ.Nanoi mprint lithography[J].J.Vac.Sci.Technol.B,1996,14(06):4129-4134.
[20] Jaszewski R W,Schift H,Gobrecht J,et al.Hot embossingin polymers as a direct wayto patternresist[J].Micro-electronic Engineering,1998,41/42:575-578.
[21] Jung GY,Ganapathiappan S,Li X,et al.Fabrication of molecular-electronic circuits by nanoi mprint lithography at lowtemperatures and pressures[J].Appl.Phys.A,2004,78:1169-1173.
[22] Jung GY,Wu W,Ganapathiappan S,et al.Issues on nanoi mprint lithographywitha single-layer resist structure[J].Appl.Phys.A,2005,81,1331-1335.
[23] Pfeiffer K,Fink M,Bleidiessel G,et al.Novel linear and crosslinking polymers for nanoi mprinting with high etch resistance[J].Microelectronic Engineering,2000,53:411-414.
[24] Gaboriau F,Peignon MC,Barreau A,et al.High density fluorocarbon plasma etching of newresists suitable for nano-i mprint lithography[J].Microelectronic Engineering,2000,53:501-505.
[25] Schulz H,Scheer HC,Hoffmann T,et al.Newpolymer materials for nanoi mprinting[J].J.Vac.Sci.Technol.B,2000,18(4):1861-1865.
[26] Lebib A,Natali M,Li S P,et al.Control of the critical di mension with atrilayer nanoi mprint lithography procedure[J].Microelectronic Engineering,2001,57-58:411-416.
[27] Lebib A,Chen Y,Cambrila E,et al.Room-temperature and low-pressure nanoi mprint lithography[J].Microelec-tronic Engineering,2002,61-62:371-377.
[28] Choi P,Fu P F,Guo L J.Siloxane Copolymers for Nanoi mprint Lithography[J].Adv.Func.Mater.,2007,17:65-70.
[29] Lee H,Hong S,Yang K.Fabrication of100nm metal lines on flexible plastic substrate using ultraviolet curingnanoi mprint lithography[J].Applied Physics Letters,2006,88:1431121-1431123.
[30] Montague MF,Hawker CJ.Secondary patterning of UVi mprint features by photolithography[J].Chem.Mater.,2007,19:526-534.
[31] Johnson S C.Step and flash i mprint lithography:Materials and process development(Doctoral dissertation)[D].Austin:The University of Texas,2005.
[32] Ki m E K,Ekerdt J G,Willson C G.I mportance of evaporationinthe design of materials for step andflashi mprint lithography[J].J.Vac.Sci.Technol.B,2005,23(4):1515-1520.
[33] Chen Y,Banu S,Morgan H,et al.High density patternsfabricatedin SU-8by UVcuring nanoi mprint[J].Micro-electronic Engineering,2007,84:872-876.