193nm光刻胶的研制

doi:10.7517/j.issn.1674-0475.2005.04.300

影像科学与光化学 ›› 2005, Vol. 23 ›› Issue (4): 300-311.DOI: 10.7517/j.issn.1674-0475.2005.04.300

193nm光刻胶的研制

郑金红, 黄志齐, 陈昕, 焦小明, 杨澜, 文武, 高子奇, 王艳梅

北京化学试剂研究所北京100022

收稿日期:2004-12-10 修回日期:2005-04-20 出版日期:2005-07-23 发布日期:2005-07-23
基金资助:
国家863项目(2002AA3Z1330)．

The Study of 193 nm Photoresist

ZHENG Jin-hong, HUANG Zhi-qi, CHEN Xin, JIAO Xiao-ming, YANG Lan, WEN Wu, GAO Zi-qi, WANG Yan-mei

Beijing Institute of Chemical Reagents, Beijing 100022, P. R. China

Received:2004-12-10 Revised:2005-04-20 Online:2005-07-23 Published:2005-07-23

摘要/Abstract

摘要： 从主体树脂的结构设计、单体的合成工艺、主体树脂的合成工艺、光致产酸剂的评价、配方研究等多个方面论述了193nm光刻胶的研制工艺,合成出了多种适用的单体及多种结构的主体树脂,进行了大量的配方研究,筛选出了最佳配方.研制出的样品经美国SEMATECH实验室应用评价其最佳分辨率为0.1μm,最小曝光量为26mJ/cm²,不但具有优异的分辨率和光敏性,而且还具有良好的粘附性和抗干法腐蚀性.

关键词: 193 nm, 光刻胶, 单体, 主体树脂, 光致产酸剂, 配方

Abstract: This paper discuss the preparation technology of 193 nm photoresist from the structure design of matrix polymer,the synthetic technology of monomer and of matrix polymer, the evaluation of photo-acid generator and prescription research. Various suitable monomers and various structural matrix polymers were synthesized, a plenty of formulation research was carried out and the best formulation was sieved. The photoresist sample prepared was evaluated by SEMATECH. Its best resolution is 0.1 μm, the minimun exposure dose is 26 mJ/cm²;it has not only excellent resolution and photosensitivity,but also good adhesiveness and anti-dry etching.

Key words: 193 nm, photoresist, monomer, matrix resin, photo-acid generator, formulation

中图分类号:

郑金红, 黄志齐, 陈昕, 焦小明, 杨澜, 文武, 高子奇, 王艳梅. 193nm光刻胶的研制[J]. 影像科学与光化学, 2005, 23(4): 300-311.

ZHENG Jin-hong, HUANG Zhi-qi, CHEN Xin, JIAO Xiao-ming, YANG Lan, WEN Wu, GAO Zi-qi, WANG Yan-mei. The Study of 193 nm Photoresist[J]. Imaging Science and Photochemistry, 2005, 23(4): 300-311.

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193nm光刻胶的研制

The Study of 193 nm Photoresist

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