Imaging Science and Photochemistry ›› 1992, Vol. 10 ›› Issue (1): 66-70.DOI: 10.7517/j.issn.1674-0475.1992.01.66

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PHOTOLUMINESCENCE OF Eu2O3 DOPED SrTiO3 AND SnO2 POWDER

BI ZHI-CHU1, J. KOSSANYI2, P. CÉNÉDÈSE3, A. QUIVY3   

  1. 1. Institute of Photographic Chemistry, Academia Sinica, Beijing 100101, P. K. China;
    2. Laboratoire des Materiaux Molcculaircs, C. N. R. S., Prance;
    3. Centre d’Etudes de Chimie Metallurgique, C. N. R. S., France
  • Received:1990-07-14 Revised:1991-02-27 Online:1992-02-20 Published:1992-02-20

Abstract: Powder of large energy gap semiconductor SrTiO3 and SnO2 has been doped with Eu2O3 (1 atom % of Eu) and their photoluminescent properties were investigated. It was found that the main behaviors of their emission are similar with that of pure Eu2O3 but the relative intensity and the emission pattern of the spectra is greatly changed. It was shown from X-ray powder diffraction analysis that the Eu3+ ion in 1% Eu doped SrTiO3 is located at the interstitial site of the SrTiO3 lattice and in 1% Eu doped SnO2 is combined with SnO2 to from Eu2Sn2O7.

Key words: rare earth oxide, large energy gap semiconductor, doping, photolumine-scence